VN2224N3-G Supertex, VN2224N3-G Datasheet

VN2224N3-G

Manufacturer Part Number

VN2224N3-G

Description

MOSFET Small Signal 240V 1.25Ohm

Manufacturer

Supertex

Datasheet

1.VN2224N3-G.pdf (4 pages)

Specifications of VN2224N3-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.25 Ohm @ 10 V

Drain-source Breakdown Voltage

240 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.54 A

Power Dissipation

1000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Ordering Information

High Reliability Devices

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Features

Applications

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

220V

240V

DSS

DGS

ISS

and fast switching speeds

1.25Ω

(max)

DS(ON)

N-Channel Enhancement-Mode

Vertical DMOS FETs

(min)

5.0A

D(ON)

-55°C to +150°C

300°C

± 20V

DGS

DSS

VN2224N3

Order Number / Package

TO-92

—

Package Options

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Note: See Package Outline section for dimensions.

20-Pin C-Dip

VN2222NC

TO-92

S G D

—

20-pin Ceramic DIP

top view

VN2222

VN2224

Related parts for VN2224N3-G

VN2224N3-G Summary of contents

Page 1

... TO-92 20-Pin C-Dip 5.0A — VN2222NC 5.0A VN2224N3 — Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in MOS devices ...

Page 2

Thermal Characteristics Package I (continuous)* D TO-92 540mA * I (continuous) is limited by max rated Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown Voltage V Gate Threshold Voltage GS(th) ∆V Change in V with Temperature ...

Page 3

Typical Performance Curves Output Characteristics 10V (volts) DS Transconductance vs. Drain Current 25V - ...

Page 4

... Variation with Temperature DSS 1.1 1.0 0.9 - (°C) j Transfer Characteristics 25V (volts) GS Capacitance vs. Drain-to-Source Voltage 400 f = 1MHz 300 200 100 (volts) DS ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 100 150 1.4 1.2 1.0 0.8 0 ISS C RSS On-Resistance vs. Drain Current 10V ...

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