VN2224N3-G Supertex, VN2224N3-G Datasheet - Page 2

MOSFET Small Signal 240V 1.25Ohm

VN2224N3-G

Manufacturer Part Number
VN2224N3-G
Description
MOSFET Small Signal 240V 1.25Ohm
Manufacturer
Supertex
Datasheet

Specifications of VN2224N3-G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.25 Ohm @ 10 V
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.54 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics
*
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
TO-92
I
D
Symbol
BV
V
∆V
I
I
I
R
∆R
G
C
C
C
t
t
t
t
V
t
OUTPUT
(continuous) is limited by max rated T
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
rr
Package
GS(th)
DS(ON)
ISS
OSS
RSS
SD
FS
INPUT
GS(th)
DSS
DS(ON)
10V
V
0V
0V
DD
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
Static Drain-to-Source
ON-State Resistance
Drain-to-Source
Breakdown Voltage
10%
I
D
(continuous)*
540mA
t
d(ON)
10%
t
GS(th)
DS(ON)
(ON)
90%
Parameter
j
.
t
with Temperature
r
with Temperature
I
D
90%
t
(pulsed)
d(OFF)
5.0A
t
(@ 25°C unless otherwise specified)
(OFF)
VN2224
VN2222
t
90%
F
10%
Power Dissipation
Min
240
220
1.0
1.0
@ T
2
5
2
1.0W
C
= 25
Typ
500
300
1.0
0.9
1.0
2.2
0.8
10
85
20
16
65
30
-4
1
6
°
C
Max
1.25
GENERATOR
3.0
100
350
150
1.5
1.4
1.0
50
35
15
25
90
60
-5
PULSE
5
°
125
C/W
θ
R
INPUT
jc
mV/°C
gen
%/°C
Unit
mA
nA
µA
pF
ns
ns
V
V
V
A
°
170
C/W
θ
V
V
V
V
T
V
V
V
V
V
V
V
f = 1 MHz
V
V
ja
V
V
I
R
V
D
A
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
DD
GEN
= 2A
= 125°C
= 25V, I
= V
= ±20V, V
= 0V, V
= 0V, V
= 5V, V
= 10V, V
= 5V, I
= 10V, I
= 10V, I
= 0V, V
= 0V, I
= 0V, I
= 0V, I
= V
= 25V
= 10Ω
DS
DS
Conditions
540mA
, I
, I
D
SD
SD
D
I
D
DS
DS
DS
DS
D
D
D
D
DR
= 2A
= 5mA
DS
= 5mA
= 2A
= 100mA
= 1A
= 5mA
= 2A
= 2A
DS
*
= Max Rating
= 0.8 Max Rating
= 25V
= 25V
= 25V
V
VN2222/VN2224
= 0V
DD
R
L
D.U.T.
OUTPUT
5.0A
I
DRM

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