NTE375 NTE ELECTRONICS, NTE375 Datasheet
NTE375
Manufacturer Part Number
NTE375
Description
Replacement Semiconductors TO-220 NPN VERT DEFL
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE375.pdf
(2 pages)
Specifications of NTE375
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
150V
Transition Frequency Typ Ft
8MHz
Power Dissipation Pd
1.75W
Dc Collector Current
2A
Dc Current Gain Hfe
100
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation (T
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
C
EBO
= +25 C), P
= +25 C), P
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25 C unless otherwise specified)
A
Symbol
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25 C unless otherwise specified)
(Compl to NTE398)
TV Vertical Output
I
I
CE(sat)
BE(sat)
h
CBO
EBO
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
I
I
NTE375
C
C
CB
EB
CE
CE
= 1A, I
= 1A, I
= 5V, I
= 180V, I
= 2V, I
= 5V, I
Test Conditions
B
B
C
C
C
= 100mA
= 100mA
= 0
= 500mA
= 500mA
E
= 0
Min
100
–
–
–
–
–
Typ
–
–
–
8
–
–
–40 to +150 C
Max Unit
200
1.0
5.0
1.5
1.8
–
+150 C
1.75W
MHz
200V
150V
mA
mA
25W
V
V
10A
6V
2A
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NTE375 Summary of contents
Page 1
... Storage Temperature Range, T Electrical Characteristics: (T Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector–Emitter Saturation Voltage V Base–Emitter Saturation Voltage NTE375 Silicon NPN Transistor TV Vertical Output (Compl to NTE398) = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Dia Max .070 (1.78) Max Base .100 (2.54) .420 (10.67) Max .250 (6.35) Max Emitter Collector/Tab .110 (2.79) .500 (12.7) Max .500 (12.7) Min ...