NTE916 NTE ELECTRONICS, NTE916 Datasheet - Page 2

• Manufacturer Part Number: NTE916
• Description: Replacement Semiconductors DIP-16 COM EM ARRAY
• Manufacturer: NTE ELECTRONICS

Specifications of NTE916

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 16V
• Power Dissipation Pd: 750mW
• Dc Collector Current: 100mA
• Dc Current Gain Hfe: 40
• Operating Temperature Range: -55°C To +125°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics: (T
Collector–Base Breakdown Voltage
Collector–Substrate Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
DC Forward Current Transfer Ratio
Base–Emitter Saturation Voltage
Collector–Emitter Saturation Voltage
Collector Cutoff Current
Parameter
(6.22)
.245
Min
16
1
Collector Q
Collector Q
Collector Q
Collector Q
A
Substrate
= +25 C unless otherwise specified)
Base Q
Base Q
Base Q
.700 (17.7)
.785 (19.9)
.100 (2.54)
V
V
V
V
Symbol
Pin Connection Diagram
V
V
Max
(BR)EBO
(BR)CES
(BR)CEO
(BR)CIO
CE(sat)
I
I
BE(sat)
h
1
2
2
5
5
7
7
CEO
CBO
FE
1
2
3
4
5
6
7
8
I
I
I
I
V
V
I
I
I
V
V
C
CI
C
C
C
C
C
CE
CE
CE
CB
= 500 A, I
= 1mA, I
= 500 A
= 30mA, I
= 30mA, I
= 50mA, I
= 500 A, I
= 500mV, I
= 800mV, I
= 10V, I
= 10V, I
9
8
16
15
14
13
12
11
10
Test Conditions
9
Collector Q
Collector Q
Collector Q
Common Emitter
Base Q
Base Q
Base Q
Base Q
.200 (5.08)
B
B
B
B
B
E
.260 (6.6) Max
E
= 0
E
Max
= 1mA
= 1mA
= 5mA
= 0
= 0
= 0
= 0, I
C
C
1
3
4
6
= 30mA
= 50mA
3
4
6
B
= 0
(7.62)
.300
Min
5.0
20
20
16
30
40
–
–
–
–
–
0.87
0.27
Typ
6.9
0.4
60
60
24
68
70
–
–
Max Unit
1.0
0.5
0.7
10
–
–
–
–
–
–
1
V
V
V
V
V
V
V
A
A