NTE5620 NTE ELECTRONICS, NTE5620 Datasheet - Page 2

• Manufacturer Part Number: NTE5620
• Description: Replacement Semiconductors TO-220 800V 8A TRIAC
• Manufacturer: NTE ELECTRONICS

Specifications of NTE5620

• Peak Repetitive Off-state Voltage, Vdrm: 800V
• Gate Trigger Current Max (qi), Igt: 50mA
• On State Rms Current It(rms): 8A
• Peak Non Rep Surge Current Itsm 50hz: 100A
• Holding Current Max Ih: 50mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics: (T
Peak Blocking Current (Either Direction)
Peak On–State Voltage (Either Direction)
Peak Gate Trigger Current
Peak Gate Trigger Voltage
Holding Current (Either Direction)
Critical Rate of Rise of Off–State Voltage
Critical Rate of Rise of Commutation Voltage
(Rated V
(I
Duty Cycle < 2%)
(Main Terminal Voltage = 12Vdc, R
(Main Terminal Voltage = 12Vdc, R
(Main Terminal Voltage = Rated V
T
(Main Terminal Voltage = 24Vdc, Gate Open
I
(Rated V
Gate Open)
(Rated V
Gate Unenergized, T
T
TM
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
J
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
= 200mA)
= +125 C)
= 11.3A Peak; Pulse Width = 1 to 2ms,
DRM
DRM
DRM
, I
, T
, Exponential Waveform, T
T(RMS)
J
= +125 C, Gate Open)
Characteristics
C
= 6A, Commutating di/dt = 4.3A/ms,
= +80 C)
C
= +25 C unless otherwise specified)
DRM
L
L
= 100 Ohms)
= 100 Ohms)
, R
J
L
= +125 C,
= 10k ,
Symbol
dv/dt(c)
dv/dt
I
V
V
DRM
I
GT
I
TM
GT
H
Min
0.2
0.2
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
100
1.7
0.9
0.9
1.1
1.4
–
–
–
–
–
–
–
–
5
Max
2.0
2.0
2.0
2.0
2.5
50
50
50
75
50
2
–
–
–
–
V/ s
V/ s
Unit
mA
mA
mA
V
V