NTE5609 NTE ELECTRONICS, NTE5609 Datasheet - Page 2

Replacement Semiconductors TO-220 600V 8A TRIAC

NTE5609

Manufacturer Part Number
NTE5609
Description
Replacement Semiconductors TO-220 600V 8A TRIAC
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE5609

Peak Repetitive Off-state Voltage, Vdrm
600V
Gate Trigger Current Max (qi), Igt
10mA
On State Rms Current It(rms)
8A
Peak Non Rep Surge Current Itsm 50hz
70A
Holding Current Max Ih
10mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Electrical Characteristics (Cont’d): (T
Note 1. For either polarity of gate voltage with reference to electrode MT
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Critical Rate–of–Rise
Critical Rate–of–Rise, Off–State
Parameter
.147 (3.75)
.070 (1.78) Max
Dia Max
Symbol
dv/dt
dv/dt
V
I
GT
I
GT
H
.100 (2.54)
c
MT
1
V
V
R
V
I
T
D
D
D
GK
= 8A, di/dt = 3.55A/ms, T
= 0.67 x V
= 12V, Note 1
= 12V, All Quadrants
A
= 1k
= +25 C unless otherwise specified)
.420 (10.67)
Test Conditions
DRM
Max
, R
MT
GK
2
= 1k , T
.250 (6.35)
C
= +85 C
Max
J
Gate
MT
= +125 C
.110 (2.79)
2
(12.7)
(12.7)
.500
.500
Max
Min
1
.
Min
50
2
Typ
Max
2.5
10
10
V/ s
V/ s
Unit
mA
mA
V

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