STM32F103TBU6 STMicroelectronics, STM32F103TBU6 Datasheet - Page 56

no-image

STM32F103TBU6

Manufacturer Part Number
STM32F103TBU6
Description
IC ARM CORTEX MCU 128KB 36VFQFPN
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet

Specifications of STM32F103TBU6

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
72MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
26
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
36-VFQFN Exposed Pad
Core
ARM Cortex M3
Featured Product
STM32 Cortex-M3 Companion Products
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
For Use With
497-11038 - BOARD DEMO FUEL GAUGE STM32

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STM32F103TBU6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STM32F103TBU6
Manufacturer:
ST
0
Part Number:
STM32F103TBU6
Manufacturer:
ST
Quantity:
20 000
Part Number:
STM32F103TBU6
0
Part Number:
STM32F103TBU6TR
Manufacturer:
ST
0
Electrical characteristics
5.3.10
56/99
Table 28.
1. Guaranteed by design, not tested in production.
Table 29.
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Symbol
Symbol
N
V
t
I
RET
DD
prog
END
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Supply current
Programming voltage
Endurance
Data retention
Parameter
Flash memory characteristics (continued)
Flash memory endurance and data retention
Parameter
T
T
1 kcycle
1 kcycle
10 kcycles
A
A
= –40 to +105 °C (7 suffix versions)
Table
= –40 to +85 °C (6 suffix versions)
Doc ID 13587 Rev 13
(2)
(2)
Read mode
f
states, V
Write / Erase modes
f
Power-down mode / Halt,
V
30. They are based on the EMS levels and classes
HCLK
HCLK
DD
(2)
at T
at T
at T
Conditions
= 3.0 to 3.6 V
A
A
= 72 MHz with 2 wait
= 72 MHz, V
= 85 °C
= 105 °C
A
DD
Conditions
= 55 °C
= 3.3 V
DD
= 3.3 V
STM32F103x8, STM32F103xB
Min
Min
30
10
20
10
2
(1)
(1)
Value
Typ
Typ
Max
Max
3.6
20
50
5
(1)
DD
kcycles
and
Years
Unit
Unit
mA
mA
µA
V

Related parts for STM32F103TBU6