NTE68 NTE ELECTRONICS, NTE68 Datasheet - Page 2

• Manufacturer Part Number: NTE68
• Description: Replacement Semiconductors TO-3 HI-PWR AMP
• Manufacturer: NTE ELECTRONICS

Specifications of NTE68

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -250V
• Transition Frequency Typ Ft: 4MHz
• Power Dissipation Pd: 250W
• Dc Collector Current: 20A
• Dc Current Gain Hfe: 150
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics: (T
Note 3. Pulse Test: Pulse Width = 300 s, Duty Cycle
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Second Breakdown
Second Breakdown Collector Current
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter On Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
with Base Forward Bias
Parameter
.350 (8.89)
.215 (5.45)
(10.92)
.430
Emitter
C
.312 (7.93) Min
V
Symbol
V
V
= +25 C unless otherwise specified)
CEO(sus)
I
I
I
CE(sat)
BE(on)
h
C
CEX
CEO
EBO
I
S/b
f
FE
T
ob
Base
.135 (3.45) Max
I
V
V
V
V
V
V
V
I
I
V
V
V
C
C
C
CE
CE
EB
CE
CE
CE
CE
CE
CE
CB
= 100mA, I
= 8A, I
= 16A, I
= 5V, I
= 250V, V
= 200V, I
= 50V, t = 0.5s (non–repetitive)
= 80V, t = 0.5s (non–repetitive)
= 4V, I
= 4V, I
= 4V, I
= 10V, I
= 10V, I
.875 (22.2)
Dia Max
(30.16)
B
1.187
B
C
C
C
= 800mA
C
Test Conditions
Collector/Case
= 3.2A
C
E
= 0
= 8A
= 16A
= 8A
(16.9)
B
B
.665
= 0, f
= 1A, f
BE(off)
= 0, Note 3
= 0
.040 (1.02)
2%.
test
.525 (13.35) R Max
= 1.5V
test
= 1MHz
= 1MHz
.188 (4.8) R Max
.156 (3.96) Dia
(2 Holes)
Seating
Plane
Min
250
15
–
–
–
5
2
5
–
–
–
4
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
250
500
500
500
1.4
4.0
2.2
60
–
–
–
–
–
MHz
Unit
pF
V
V
V
V
A
A
A
A
A