NTE5566 NTE ELECTRONICS, NTE5566 Datasheet
NTE5566
Manufacturer Part Number
NTE5566
Description
Replacement Semiconductors G/P SCR
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5566.pdf
(2 pages)
Specifications of NTE5566
Peak Repetitive Off-state Voltage, Vdrm
600V
Gate Trigger Current Max, Igt
30mA
Current It Av
35A
On State Rms Current It(rms)
35A
Peak Non Rep Surge Current Itsm 50hz
300A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
Description:
The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO−48 isolated stud
TO−48 type package designed for industrial and consumer applications such as power supplies, bat-
tery chargers, temperature, motor, light and welder controls.
Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage & Reverse Voltage (T
RMS On−State Current (T
Peak Surge (Non−Repetitive) On−State Current, I
Peak Gate−Trigger Current (3μs Max), I
Peak Gate−Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction−to−Case, R
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Peak Off−State Current
Maximum On−State Voltage (Peak)
DC Holding Current
DC Gate Trigger Current
DC Gate Controlled Turn−On Time
Critical Rate of Rise of Off−State Voltage
NTE5562
NTE5564
NTE5566
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Silicon Controlled Rectifiers (SCR)
= +75°C), I
NTE5562, NTE5564, NTE5566
stg
35 Amp, TO48 Isolated Stud
GT
oper
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
≤ for 3μs Max), P
Symbol
G(AV)
Critical
I
I
dv/dt
DRM
V
T
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
HO
GT
TM
GT
T(RMS)
GTM
,
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
T
Anode Voltage = 12Vdc, R
T
I
T
T
GT
J
C
C
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +100°C, Gate Open, V
= +25°C
=+ 25°C
= +100°C, Gate Open
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150mA , t
= +25°C, Gate Open
TSM
thJC
Test Conditions
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+t
= +100°C), V
R
DRM
L
= 30Ω,
&V
DRM
RRM
, V
Min
RRM
−
−
−
−
−
−
Typ
−40° to +150°C
−40° to +150°C
100
2.5
−
−
−
−
Max Unit
2.0
1.6
50
30
−
−
1.6/W
400V
600V
300A
V/μs
20W
20W
mA
mA
mA
μs
35A
200
V
20
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NTE5566 Summary of contents
Page 1
... Description: The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO−48 isolated stud TO−48 type package designed for industrial and consumer applications such as power supplies, bat- tery chargers, temperature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak Off−State Voltage & Reverse Voltage (T NTE5562 ...
Page 2
Max 1.260 (32.0) Max .445 (11.3) Max Cathode Anode Gate .595 (15.1) Max 1/4−28 UNF−2A Isolated Stud ...