M25P80-VMN6P NUMONYX, M25P80-VMN6P Datasheet - Page 41

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M25P80-VMN6P

Manufacturer Part Number
M25P80-VMN6P
Description
MEMORY, FLASH, SERIAL, 8MB, 8NSOIC
Manufacturer
NUMONYX
Datasheet

Specifications of M25P80-VMN6P

Memory Size
8Mbit
Clock Frequency
75MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
NSOIC
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Package / Case
NSOIC
Memory Type
Flash
Memory Configuration
1M X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P80-VMN6P
Manufacturer:
ST
0
Part Number:
M25P80-VMN6P
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
M25P80-VMN6P
Quantity:
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Part Number:
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Manufacturer:
ST
Quantity:
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Table 15.
Symbol
t
t
t
t
t
t
t
t
t
SHQZ
HHQX
WHSL
SHWL
CLCH
CHCL
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CH
SLCH
CHSL
SHSL
CLQV
CLQX
HLCH
CHHL
DP
CL
f
f
C
R
(2)
(2)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(5)
(5)
t
t
t
t
t
Alt.
t
t
t
CLH
CSS
DSU
CSH
t
CLL
t
DIS
f
DH
t
HO
HZ
LZ
AC characteristics (75 MHz operation)
C
V
Clock frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI,
RDID, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Rise time
Clock Fall time
S active setup time (relative to C)
S not active hold time (relative to C)
Data In setup time
Data In hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output Valid under 30 pF
Clock Low to Output Valid under 10 pF
Output hold time
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect setup time
Write Protect hold time
S High to Deep Power-down mode
S High to Standby mode without Electronic Signature
Read
S High to Standby mode with Electronic Signature
Read
75 MHz available only for products made in 110 nm technology,
Test conditions specified in
(3)
(4)
(peak to peak)
(peak to peak)
Parameter
Table 10
and
Min.
Table 12
100
100
DC
DC
0.1
0.1
20
6
6
5
5
2
5
5
5
0
5
5
5
5
Typ.
(1)
Max.
1.8
75
33
8
8
6
8
8
3
3
MHz
MHz
V/ns
V/ns
Unit
41/57
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
μs

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