DSPIC30F1010-20E/SO Microchip Technology, DSPIC30F1010-20E/SO Datasheet - Page 54

• Manufacturer Part Number: DSPIC30F1010-20E/SO
• Description: 6KB, Flash, 256bytes-RAM, 30MIPS, 21I/O, 16-bit Family,nanoWatt 28 SOIC .300in T
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F1010-20E/SO

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 21
• Program Memory Size: 6KB (2K x 24)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 6x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 28-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: DM300023 - KIT DEMO DSPICDEM SMPS BUCKDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

12.0
12.1
If it is determined that the programming executive does
not reside in executive memory (as described in
Section 4.0 “Confirming the Contents of Executive
Memory”), it must be programmed into executive
memory using ICSP and the techniques described in
Section 11.0 “ICSP™
TABLE 12-1:
DS70102K-page 54
Step 1: Exit the Reset vector and erase executive memory.
0000
0000
0000
Step 2: Initialize the NVMCON to erase executive memory.
0000
0000
Step 3: Unlock the NVMCON for programming.
0000
0000
0000
0000
Step 4: Initiate the erase cycle.
0000
0000
0000
—
0000
0000
0000
0000
0000
Step 5: Initialize the TBLPAG and the write pointer (W7).
0000
0000
0000
0000
0000
Step 6: Initialize the NVMCON to program 32 instruction words.
0000
0000
Step 7: Load W0:W5 with the next 4 words of packed programming executive code and initialize W6 for
0000
0000
0000
0000
0000
0000
Command
(Binary)
programming. Programming starts from the base of executive memory (0x800000) using W6 as a read
pointer and W7 as a write pointer.
PROGRAMMING THE
PROGRAMMING EXECUTIVE
TO MEMORY
Overview
040100
040100
000000
24072A
883B0A
200558
883B38
200AA9
883B39
A8E761
000000
000000
—
000000
000000
A9E761
000000
000000
200800
880190
EB0380
000000
000000
24001A
883B0A
2<LSW0>0
2<MSB1:MSB0>1
2<LSW1>2
2<LSW2>3
2<MSB3:MSB2>4
2<LSW3>5
(Hexadecimal)
PROGRAMMING THE PROGRAMMING EXECUTIVE
Data
Mode”.
GOTO 0x100
GOTO 0x100
NOP
MOV
MOV
MOV
MOV
MOV
MOV
BSET NVMCON, #15
NOP
NOP
Externally time ‘P13a’ ms (see
Timing
NOP
NOP
BCLR NVMCON, #15
NOP
NOP
MOV
MOV
CLR
NOP
NOP
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
Requirements”)
#0x4072, W10
W10, NVMCON
#0x55, W8
W8, NVMKEY
#0xAA, W9
W9, NVMKEY
#0x80, W0
W0, TBLPAG
W7
#0x4001, W10
W10, NVMCON
#<LSW0>, W0
#<MSB1:MSB0>, W1
#<LSW1>, W2
#<LSW2>, W3
#<MSB3:MSB2>, W4
#<LSW3>, W5
Storing the programming executive to executive
memory is similar to normal programming of code
memory. The executive memory must first be erased,
and then the programming executive must be
programmed 32 words at a time. This control flow is
summarized in
Description
Section 13.0 “AC/DC Characteristics and
Table
12-1.
© 2010 Microchip Technology Inc.