LM4871M National Semiconductor, LM4871M Datasheet - Page 12
LM4871M
Manufacturer Part Number
LM4871M
Description
Audio Power Amplifier IC
Manufacturer
National Semiconductor
Specifications of LM4871M
No. Of Channels
1
Output Power
1.2W
Load Impedance
8ohm
Amplifier Case Style
SOIC
No. Of Pins
8
Output Power Pout
1.2W
Mounting Type
Surface Mount
Supply Voltage Min
2V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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LM4871 MDA MWA 3W Audio Power Amplifier With Shutdown Mode
Die/Wafer Characteristics
SIGNAL NAME
SHUTDOWN
BYPASS
NC
INPUT +
INPUT -
GND
VOUT 1
GND
VDD
GND
VOUT 2
GND
Physical Die Identification
Die Step
Wafer Diameter
Dise Size (Drawn)
Thickness
Min Pitch
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
PAD# NUMBER
Fabrication Attributes
Physical Attributes
10
11
12
1
2
3
4
5
6
7
8
9
(Referenced to die center, coordinates in µm) NC = No Connection
Die Bond Pad Coordinate Locations (C - Step)
-559
-559
-559
-559
-559
-476
-135
-135
-473
554
554
554
X/Y COORDINATES
LM4871C
C
150mm
1372µm x 1758µm
54mils x 69mils
406µm Nominal
164µm Nominal
X
Die Layout (C - Step)
12
-248
-486
-725
-598
-686
541
376
568
598
752
-45
-4
Y
Bond Pad Opening Size (min)
Bond Pad Metalization
Passivation
Back Side Metal
Back Side Connection
10000840
102
102
102
102
102
102
102
102
102
102
102
102
General Die Information
X
PAD SIZE
x
x
x
x
x
x
x
x
x
x
x
x
102µm x 102µm
0.5%
COPPER_BAL.
ALUMINUM
NITRIDE
BARE BACK
GND
102
102
210
102
102
102
210
102
210
102
210
102
Y