LMH6622MAX National Semiconductor, LMH6622MAX Datasheet - Page 2

• Manufacturer Part Number: LMH6622MAX
• Description: IC,Operational Amplifier,DUAL,BIPOLAR,SOP,8PIN,PLASTIC
• Manufacturer: National Semiconductor

Specifications of LMH6622MAX

• Dc: 06+
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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Dynamic Performance
f
BW
SR
TS
Tr
Tf
Distortion and Noise Response
e
i
DG
DP
HD2
HD3
MTPR
Input Characteristics
V
TC V
I
I
R
C
CL
n
OS
B
Symbol
n
OS
IN
IN
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Unless otherwise specified, T
at the temperature extremes.
±
ESD Tolerance
V
Supply Voltage (V
Voltage at Input Pins
Soldering Information
0.1dB
6V Electrical Characteristics
IN
Human Body Model
Machine Model
Infrared or Convection (20 sec)
OS
Differential
−3dB BW
0.1dB Gain Flatness
Slew Rate (Note 8)
Settling Time
Rise Time
Fall Time
Input Referred Voltage Noise
Input Referred Current Noise
Differential Gain
Differential Phase
2
3
Upstream
Downstream
Input Offset Voltage
Input Offset Average Drift
Input Offset Current
Input Bias Current
Input Resistance
Input Capacitance
nd
rd
Harmonic Distortion
Harmonic Distortion
+
– V
Parameter
−
)
J
= 25˚C, V
V
+
+
+0.5V, V
= 6V, V
200V (Note 2)
V
V
V
V
V
V
V
f = 100kHz
f = 100kHz
R
R
f
f
f
f
V
(see test circuit 5)
V
(see test circuit 5)
V
V
V
V
Common Mode
Differential Mode
Common Mode
Differential Mode
2kV (Note 2)
c
c
c
c
O
O
O
O
O
O
O
O
O
CM
CM
CM
CM
L
L
(Note 1)
= 1MHz, V
= 1MHz, V
= 1MHz, V
= 1MHz, V
= 150Ω, R
= 150Ω, R
= 200mV
= 200mV
= 2V
= 2V
= 2V
= 0.2V Step, 10% to 90%
= 0.2V Step, 10% to 90%
= 0.6 V
= 0.6 V
−
= 0V
= 0V (Note 7)
= 0V
= 0V
−
= −6V, V
±
235˚C
13.2V
−0.5V
1.2V
PP
PP
PP
RMS
RMS
to
to
Conditions
PP
PP
O
O
O
O
F
F
±
±
, 26kHz to 132kHz
, 144kHz to 1.1MHz
= 2V
= 2V
= 2V
= 2V
= 470Ω, NTSC
= 470Ω, NTSC
CM
0.1%
1.0%
2
= 0V, A
PP
PP
PP
PP
Operating Ratings
, R
, R
, R
, R
Supply Voltage (V
Junction Temperature Range
(Note 3), (Note 4)
Package Thermal Resistance (Note 4) (θ
Storage Temperature Range
Junction Temperature (Note 4)
8-pin SOIC
8-pin MSOP
Wave Soldering (10 sec)
L
L
L
L
V
= 100Ω
= 500Ω
= 100Ω
= 500Ω
= +2, R
F
= 500Ω, R
(Note 6)
+
−1.2
−1.5
Min
– V
−2
−1
−
)
L
= 100Ω. Boldface limits apply
(Note 5)
−0.04
−100
−100
+0.2
−2.5
0.03
0.03
Typ
−90
−94
−78
−70
160
2.3
2.3
1.6
1.5
4.7
0.9
1.0
30
85
40
35
17
12
(Note 1)
(Note 6)
−65˚C to +150˚C
JA
Max
+1.2
−40˚C to +85˚C
1.5
±
+2
10
15
)
1
2.25V to
166˚C/W
211˚C/W
+150˚C
µV/˚C
nV/
pA/
260˚C
Units
MHz
MHz
±
V/µs
deg
dBc
dBc
dBc
mV
MΩ
µA
µA
kΩ
ns
ns
ns
pF
pF
%
6V