MGA-87563-TR1 Avago Technologies US Inc., MGA-87563-TR1 Datasheet - Page 5

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MGA-87563-TR1

Manufacturer Part Number
MGA-87563-TR1
Description
IC,Microwave/Millimeter Wave Amplifier,SINGLE,GAAS,TSSOP,6PIN,PLASTIC
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of MGA-87563-TR1

Current - Supply
4.5mA
Frequency
500MHz ~ 4GHz
Gain
14dB
Noise Figure
1.6dB
P1db
-2dBm
Package / Case
SC-70-6, SC-88, SOT-363
Rf Type
Cellular, GPS, ISM, PCS
Test Frequency
2GHz
Voltage - Supply
3V, 5V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
516-1512-2

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Manufacturer
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MGA-87563 Applications Information
Introduction
The MGA-87563 low noise RF amplifier is designed to
simplify wireless RF applications in the 0.5 to 4 GHz
frequency range. The MGA-87563 is a two-stage, GaAs
Microwave Monolithic Integrated Circuit (MMIC) ampli fier
that uses feedback to provide wideband gain. The output
is matched to 50Ω and the input is partially matched for
optimum noise figure.
A patented, active bias circuit makes use of current sources
to “re-use” the drain current in both stages of gain, thus
minimizing the required supply current and decreasing
sensitivity to varia tions in power supply voltage.
Test Circuit
The circuit shown in Figure 10 is used for 100% RF testing
of Noise Figure and Gain. The input of this circuit is fixed
tuned for a conjugate power match (maxi mum power
transfer, or, mini mum Input VSWR) at 2 GHz. Tests in this
circuit are used to guarantee the NF
shown in the Electrical Specifications table.
The 4.7 nH inductor, L1 (Coil craft, Cary, IL part number series
1008CT-040) placed in series with the input of the amplifier
is all that is necessary to match the input to 50Ω at 2 GHz.
Figure 10. Test Circuit for 2 GHz.
Phase Reference Planes
The positions of the reference planes used to measure
S-Parameters and to specify *
are shown in Figure 11. As seen in the illustration, the
reference planes are located at the extremities of the
package leads.
Figure 11. Reference Planes.
5
INPUT
RF
TEST CIRCUIT
REFERENCE
50 Ω
PLANES
4.7 nH
L1
C1
V
10 Ω
dd
50 Ω
opt
OUTPUT
for the Noise Parameters
RF
test
and G
test
parameters
Biasing
The MGA-87563 is a voltage-biased device and operates
from a single +3 volt power supply. With a typical current
drain of only 4.5 mA, the MGA-87563 is very well suited
for use in battery powered applications. All bias regula-
tion circuitry is integrated into the MMIC, eliminating the
need for external DC compo nents. RF performance is very
consistent for 3-volt battery supplies that may range from
2.7 to 3.3 volts, depending on battery “freshness” or state
of charge for rechargeable batteries. Operation up to +5
volts is discussed at the end of the Applications section.
The test circuit in Figure 10 illustrates a suitable method for
bringing bias into the MGA-87563. The bias connection
must be designed so that it adequately bypasses the V
terminal while not inadvertently creating any resonances
at frequencies where the MGA-87563 has gain.
The 10Ω resistor, R1, serves to “de-Q” any potential
resonances in the bias line that could lead to low gain,
unwanted gain varia tions or device instability. The power
supply end of R1 is bypassed to ground with capacitor C1.
The suggested value for C1 is 100 pF. Signifi cantly higher
values for C1 are not recommended. Many higher value
chip capacitors (e.g., 1000 pF) are not of sufficiently high
quality at these frequencies to function well as a RF bypass
without adding harmful parasitics or self-resonances.
While the input and output terminals are internally resis-
tively grounded, these pins should not be considered to be
current sinks. Connection of the MGA-87563 amplifier to
circuits that are at ground potential may be made without
the additional cost and PCB space needed for DC block ing
capacitors. If the amplifier is to be cascaded with active
circuits having non-zero voltages present, the use of series
blocking capacitors is recommended.
Input Matching
The input of the MGA-87563 is partially matched internally
to 50 Ω. The use of a simple input conjugate matching
circuit (such as shown in Figure 10 for 2 GHz), will lower
the noise figure considerably. A significant advan tage of
the MGA-87563’s design is that the impedance match for
NF
power match. This means that a very low noise figure can
be realized simul taneously with a low input VSWR. The
typical difference between the noise figure obtain able
with a conjugate power match at the input and NF
only about 0.2 dB.
o
(minimum noise figure) is very close to a conjugate
o
dd
is

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