DSEP29-06A IXYS SEMICONDUCTOR, DSEP29-06A Datasheet
DSEP29-06A
Manufacturer Part Number
DSEP29-06A
Description
DIODE, FAST, 30A, TO-220AC
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.DSEP29-06A.pdf
(3 pages)
Specifications of DSEP29-06A
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
30A
Forward Voltage Vf Max
1.26V
Reverse Recovery Time Trr Max
35ns
Forward Surge Current Ifsm Max
250A
Diode Type
Fast Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSEP29-06A
Manufacturer:
IXYS
Quantity:
12 500
Part Number:
DSEP29-06A
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
DSEP29-06AS
Manufacturer:
IXYS
Quantity:
12 500
HiPerFRED
with soft recovery
V
600
Symbol
I
I
I
E
I
T
T
T
P
M
Weight
Symbol
I
V
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
600
600
FRMS
FAVM
FSM
AR
R
RM
rr
V
VJ
VJM
stg
RSM
AS
tot
F
thJC
thCH
d
①
②
typ.
typ.
①
②
V
600
600
600
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
RRM
V
Conditions
rect., d = 0.5; T
T
T
I
V
T
mounting torque
typical
Conditions
T
T
I
typ.
I
V
V
-di
AS
F
F
VJ
VJ
C
VJ
VJ
A
R
R
= 30 A;
= 1 A; -di/dt = 200 A/µs;
F
= 1.3 A; L = 180 µH
= 1.5·V
= 25°C
= 30 V; T
= 100 V; I
/dt = 100 A/µs; T
= 45°C; t
= 25°C; non-repetitive
= 25°C; V
= 150°C; V
Type
DSEP 29-06A
DSEP 29-06AS
DSEP 29-06B
TM
R
typ.; f = 10 kHz; repetitive
p
VJ
T
T
F
= 10 ms (50 Hz), sine;
T
VJ
VJ
R
R
= 25°C
= 50 A;
C
C
Epitaxial Diode
= V
= V
= 150°C
= 25°C
(Version A, AS)
(Version B)
(Version A, B)
RRM
RRM
VJ
= 100°C
= 135°C
= 125°C
(Version A, AS)
(Version B)
Version A
Characteristic max. Values
1.26
1.61
250
-55...+175
-55...+150
0.9
0.5
35
1
6
0.4...0.6
Maximum Ratings
250
200
175
165
0.2
0.1
A
35
30
30
Version B
2
1.58
2.52
250
0.9
0.5
30
2
4
DSEP 29-06A DSEP 29-06AS
DSEP 29-06B
K/W
K/W
Nm
mA
mJ
µA
°C
°C
°C
ns
W
A
A
A
A
A
A
V
V
A
g
C
I
V
t
TO-220 AC
TO-263
A = Anode, C = Cathode, TAB = Cathode
Features
• Planar passivated chips
• Very short recovery time
l
• Low I
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
• Rectifiers in switch mode power
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
• Soft reverse recovery for low
• Low I
Dimensions see Outlines.pdf
FAV
rr
International standard package
Extremely low switching losses
switching devices
and motor control circuits
supplies (SMPS)
operation
EMI/RFI
- Power dissipation within the diode
- Turn-on loss in the commutating switch
RRM
C
RM
RM
= 30 A
= 600 V
= 30/35 ns
A
-values
reduces:
A
A
C (TAB)
C (TAB)
1 - 3
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DSEP29-06A Summary of contents
Page 1
TM HiPerFRED Epitaxial Diode with soft recovery V V Type RSM RRM V V 600 600 DSEP 29-06A 600 600 DSEP 29-06AS 600 600 DSEP 29-06B Symbol Conditions I FRMS I rect 0.5; T (Version A, AS) FAVM ...
Page 2
=150° =100° =25° 0.0 0.5 1.0 1 Fig. 1 Forward current I versus 2.0 1.5 K ...
Page 3
150° 100° 25° Fig. 1 Forward current I versus 2.0 1.5 ...