DSEP30-06BR IXYS SEMICONDUCTOR, DSEP30-06BR Datasheet
DSEP30-06BR
Manufacturer Part Number
DSEP30-06BR
Description
DIODE, FAST, 30A, ISOPLUS247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.DSEP30-06BR.pdf
(3 pages)
Specifications of DSEP30-06BR
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
30A
Forward Voltage Vf Max
2.51V
Reverse Recovery Time Trr Max
30ns
Forward Surge Current Ifsm Max
250A
Diode Type
Fast Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFRED
with soft recovery
V
Symbol
I
I
I
E
I
T
T
T
P
M
F
V
Weight
* Verson A only; ** Version BR only
Symbol
I
V
R
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
600
600
600
FRMS
FAVM
FSM
AR
R
RM
rr
V
VJ
VJM
stg
C
RSM
AS
tot
ISOL
F
thJC
thJC
thCH
d
*
①
②
typ.
**
typ.
①
②
V
600
600
600
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
RRM
V
Conditions
rect., d = 0.5; T
T
T
T
I
V
T
(Vers. BR)
mounting torque
mounting force with clip
50/60 Hz, RMS, t = 1 minute, leads-to-tab
typical
Conditions
T
T
I
Version BR
typ.
I
V
V
T
AS
F
F
C
VJ
VJ
C
VJ
VJ
VJ
A
R
R
= 30 A;
= 1 A; -di/dt = 200 A/µs;
(Vers. B) = 125°C; T
= 1.3 A; L = 180 µH
= 1.5·V
= 25°C
= 30 V; T
= 100 V; I
= 45°C; t
= 25°C; non-repetitive
= 25°C V
= 150°C V
= 100°C
Type
DSEP 30-06A
DSEP 30-06B
DSEP 30-06BR
TM
R
typ.; f = 10 kHz; repetitive
p
VJ
T
T
F
= 10 ms (50 Hz), sine
VJ
VJ
R
R
= 25°C
= 50 A; -di
C
Epitaxial Diode
= V
= V
= 150°C
= 25°C
(Vers. A) = 135°C
RRM
RRM
C
(Vers. BR) = 115°C
F
/dt = 100 A/µs
Characteristic max. Values
Vers. A
1.25
1.60
0.25
-55...+175
-55...+150
250
0.9
35
0.8...1.2
20...120
1
6
Maximum Ratings
2500
250
175
165
135
0.2
0.1
A
Vers. B
70
30
1.56
2.51
0.25
250
6
0.9
1.1
30
2
4
DSEP 30-06BR DSEP 30-06B
K/W
K/W
K/W
mA
mJ
Nm
V~
µA
°C
°C
°C
ns
W
W
A
A
A
A
V
V
A
g
N
C
I
V
t
TO-247 AD
Version A
C
A = Anode, C = Cathode
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
• Soft recovery behaviour
• Epoxy meets UL 94V-0
• Version ..R isolated and
Applications
• Antiparallel diode for high frequency
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
• Rectifiers in switch mode power
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
• Soft reverse recovery for low
• Low I
Dimensions see Outlines.pdf
FAV
A
rr
UL registered E153432
switching devices
and motor control circuits
supplies (SMPS)
operation
EMI/RFI
- Power dissipation within the diode
- Turn-on loss in the commutating switch
RRM
RM
RM
= 30 A
= 600 V
= 30/35 ns
-values
reduces:
C (TAB)
DSEP 30-06A
C
ISOPLUS 247
A
Version BR
back surface
Isolated
1 - 3
TM
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DSEP30-06BR Summary of contents
Page 1
TM HiPerFRED Epitaxial Diode with soft recovery V V Type RSM RRM V V 600 600 DSEP 30-06A 600 600 DSEP 30-06B 600 600 DSEP 30-06BR Symbol Conditions I FRMS I rect 0.5; T (Vers 135°C ...
Page 2
... F 130 T = 100° 300V R 120 60A 110 30A 15A F 100 200 400 600 800 1000 A/µs -di /dt F Fig. 5 Recovery time t versus -di rr DSEP30-06A DSEC60-06A s 0.01 0.1 t DSEP 30-06A 100° 300V 60A 30A 15A 200 400 600 A/µs 800 -di /dt F Fig. 3 Peak reverse current I ...
Page 3
150° 100° 25° Fig. 1 Forward current I versus 2.0 1.5 ...