DSEP30-12CR IXYS SEMICONDUCTOR, DSEP30-12CR Datasheet

DIODE, FAST, 30A, ISOPLUS247

DSEP30-12CR

Manufacturer Part Number
DSEP30-12CR
Description
DIODE, FAST, 30A, ISOPLUS247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet

Specifications of DSEP30-12CR

Repetitive Reverse Voltage Vrrm Max
1.2kV
Forward Current If(av)
30A
Forward Voltage Vf Max
5V
Reverse Recovery Time Trr Max
20ns
Forward Surge Current Ifsm Max
250A
Diode Type
Fast Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSEP30-12CR
Manufacturer:
IXYS
Quantity:
210
HiPerDynFRED
with soft recovery
(Electrically Isolated Back Surface)
1200
Symbol
I
I
I
I
E
I
T
T
T
P
V
Mounting force with clip
Weight
Symbol
I
V
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
V
FRMS
FAVM
FRM
FSM
AR
R
RM
rr
VJ
VJM
stg
tot
ISOL
F
AS
thJC
thCH
V
RSM
1200
V
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
RRM
V
Conditions
T
t
T
T
I
V
T
50/60 Hz RMS; I
typical
Conditions
T
T
I
with heatsink compound
I
V
V
T
P
AS
F
F
C
VJ
VJ
C
VJ
VJ
VJ
A
R
R
= 30 A;
= 1 A; -di/dt = 200 A/µs;
< 10 µs; rep. rating, pulse width limited by T
= 85°C; rectangular, d = 0.5
= 1.3 A; L = 180 µH
= 1.25·V
= 25°C
= 100 V; I
= 30 V; T
= 45°C; t
= 25°C V
= 100°C
= 25°C; non-repetitive
= 150°C V
Type
DSEP 30-12CR
R
VJ
p
typ.; f = 10 kHz; repetitive
T
T
F
= 10 ms (50 Hz), sine
R
R
VJ
VJ
= 25°C
= 50 A; -di
= V
= V
= 150°C
= 25°C
ISOL
TM
RRM
RRM
1 mA
F
/dt = 100 A/µs
Advanced Technical Information
10...50/2...10
typ.
VJM
0.25
20
4.0
Characteristic Values
-55...+175
-55...+150
Maximum Ratings
250
175
165
tbd
0.2
0.1
2.5
A
70
30
max.
250
6
3.1
5.0
0.9
2
N/lb.
K/W
K/W
mA
mJ
µA
kV
°C
°C
°C
ns
W
A
A
A
A
A
V
V
A
g
C
I
V
t
ISOPLUS 247
A = Anode, C = Cathode
* Patent pending
Features
Applications
Advantages
Dimensions see IXYS CD 2000
FAV
rr
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<25pF)
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Epoxy meets UL 94V-0
Isolated and UL registered E153432
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
- Power dissipation within the diode
- Turn-on loss in the commutating
ISOPLUS 247
spring mounting
RRM
switch
RM
RM
-values
= 30 A
= 1200 V
= 20 ns
reduces:
C
DSEP 30-12CR
A
TM
TM
package for clip or
Isolated back surface *
1 - 1

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