7MBP50TEA-120-50 FUJI ELECTRIC, 7MBP50TEA-120-50 Datasheet

7MBP50TEA-120-50

Manufacturer Part Number

7MBP50TEA-120-50

Description

IGBT, 7 PACK MOD, 1200V, 50A, P622

Manufacturer

FUJI ELECTRIC

Datasheet

1.7MBP50TEA-120-50.pdf (9 pages)

Specifications of 7MBP50TEA-120-50

Dc Collector Current

50A

Collector Emitter Voltage Vces

2.2V

Power Dissipation Max

287W

Collector Emitter Voltage V(br)ceo

1.2kV

Operating Temperature Range

-20Â°C To +100Â°C

Transistor Case

RoHS Compliant

Transistor Case Style

Module

No. Of Pins

Rohs Compliant

Yes

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7MBP50TEA120

Econo IPM series

Item

Bus voltage

Collector-Emitter voltage *1

Supply voltage of Pre-Driver *4

Input signal voltage *5

Input signal current

Alarm signal voltage *6

Alarm signal current *7

Junction temperature

Operating case temperature

Storage temperature

Solder temperature *8

Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)

Screw torque

Note

· Temperature protection provided by directly detecting the junction

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in

temperature of the IGBTs

built-in control circuit

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Features

Maximum ratings and characteristics

*1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W or DB, N and U or V or W or DB

*2 : 125

*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13

*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.

*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

Collector current

*3 : Pc=125

Collector power dissipation One transistor *3

Forward current diode

*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.

*8 : Immersion time 10

Pc=125

°C

/FWD Rth(j-c)/(Ic x VF MAX)=125/0.86/(50 x 2.0) x 100>100%

°C

/IGBT Rth(j-c)=125/0.44=287W [Inverter]

/IGBT Rth(j-c)=125/0.90=139W [Brake]

1sec.

Mounting (M5)

1ms

Surge

Short operating

Symbol

-I

ALM

opr

stg

sol

DC(surge)

CES

ALM

iso

400

Min.

-20

-40

-0.5

Rating

1200V / 50A 7 in one-package

1000

1200

AC2500

Vcc+0.5

900

800

100

287

139

150

100

125

260

Vcc

Max.

3.5

Unit

°C

N·m

Related parts for 7MBP50TEA-120-50

7MBP50TEA-120-50 Summary of contents

Page 1

... Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in ...

Page 2

... Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time ...

Page 3

... Vin Vin Vin(th) Vin(th /Vin /Vin Vge (Inside IPM ) Vge (Inside IPM ) Fault (Inside IPM Fault (Inside IPM ) ) normal normal /ALM /ALM ALM ALM VccU VccU P P 20k 20k IPM IPM DC DC VinU VinU U U 15V 15V SW1 SW1 GNDU ...

Page 4

... Block diagram VccU VccU VinU VinU 3 3 ALMU ALMU 1.5k 1.5k ALM ALM Vz Vz GNDU GNDU 1 1 VccV VccV 8 8 VinV VinV 7 7 ALMV ALMV 1.5k 1.5k ALM ALM Vz Vz GNDV GNDV 5 5 VccW VccW 12 12 VinW VinW 11 11 ALMW ...

Page 5

... Characteristics Control circuit characteristics (Representative) Power supply current vs. Switching frequency Tc=125°C (typ.) 50 P-side N-side Switching frequency : fsw (kHz) Under voltage vs. Junction temperature (typ Junction temperature : Tj (°C) Alarm hold time vs. Power supply voltage (typ.) 3 2.5 Tc=100°C 2 Tc=25°C 1 ...

Page 6

... Main circuit characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C / Chip 100 80 Vcc=17V 0.5 1 1.5 Collector-Emitter voltage : Vce (V) Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C / Chip 100 0.5 1 1.5 Collector-Emitter voltage : Vce (V) Forward current vs. Forward voltage (typ.) Chip 100 80 25° ...

Page 7

... Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj= Collector current : Ic ( bias ope ra ting c=1 5V, Tj<= 125 ° repe titive puls BSO A (R epe titive puls 400 60 0 800 C olle ctor- Emitter voltage : V ce (V) Power derating for ax.) (per dev ice) 500 400 300 ...

Page 8

... Switching time vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj=25 C 10000 1000 100 Collector current : Ic (A) Reverse recovery characteristics trr,Irr vs.IF (typ.) 100 Forward current:IF(A) Switching tim e vs. Collector current (typ.) 10000 toff 1000 ton 100 trr125°C trr25°C Irr125°C Irr25°C ...

Page 9

... Characteristics Dynamic Brake Characteristics (Representative) Collector current v s. Collector-Emitter v oltage (typ.) Tj=25° Vcc 0.5 1 1.5 Collector-Emitter voltage : Vce (V) Transient therm al resistance (m ax.) 1 0.1 0.01 0.0 01 0.01 Pulse w idth :Pw (sec) Power derating for IGBT (max.) (per dev ice) 200 150 ...

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