7MBP50TEA-120-50 FUJI ELECTRIC, 7MBP50TEA-120-50 Datasheet - Page 5

• Manufacturer Part Number: 7MBP50TEA-120-50
• Description: IGBT, 7 PACK MOD, 1200V, 50A, P622
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBP50TEA-120-50

• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 287W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -20°C To +100°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: Module
• No. Of Pins: 25
• Rohs Compliant: Yes

7MBP50TEA120
Characteristics
Control circuit characteristics (Representative)
Alarm hold time vs. Power supply voltage (typ.)
2.5
1.5
0.5
50
40
30
20
10
Under voltage vs. Junction temperature (typ.)
14
12
10
Power supply current vs. Switching frequency
0
3
2
1
0
8
6
4
2
0
20
12
0
40
13
Switching frequency : fsw (kHz)
Power supply voltage : Vcc (V)
Junction temperature : Tj (°C)
P-side
N-side
5
60
14
Tc=125°C (typ.)
10
80
15
Tc=100°C
Tc=25°C
15
100
16
20
120
Vcc=15V
Vcc=13V
Vcc=17V
Vcc=15V
Vcc=13V
Vcc=17V
17
140
25
18
200
150
100
2.5
1.5
0.5
0.8
0.6
0.4
0.2
50
Under voltage hysterisis vs. Jnction temperature (typ.)
2
1
0
1
0
0
12
20
12
vs. Power supply voltage (typ.)
Input signal threshold voltage
13
40
13
Over heating characteristics
Power supply voltage : Vcc (V)
Power supply voltage : Vcc (V)
Junction temperature : Tj (°C)
TjOH,TjH vs. Vcc (typ.)
14
60
14
15
80
15
TjH
TjOH
100
16
16
120
17
17
} Vin(off)
} Vin(on)
IGBT-IPM
Tj=25°C
Tj=125°C
140
18
18