P CHANNEL JFET, 45V, TO-206AA

2N5116-E3

Manufacturer Part Number2N5116-E3
DescriptionP CHANNEL JFET, 45V, TO-206AA
ManufacturerVishay
2N5116-E3 datasheets
 


Specifications of 2N5116-E3

Breakdown Voltage Vbr45VGate-source Cutoff Voltage Vgs(off) Max4V
Power Dissipation Pd500mWOperating Temperature Range-55°C To +200°C
No. Of Pins3Transistor PolarityP Channel
Continuous Drain Current Id-25mARohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Part Number
V
(V)
GS(off)
2N5114
5 to 10
2N5115
3 to 6
2N5116
1 to 4
D Low On-Resistance: 2N5114 <75 W
D Fast Switching—t
: 16 ns
ON
D High Off-Isolation—I
: –10 pA
D(off)
D Low Capacitance: 6 pF
D Low Insertion Loss
The 2N5114 series consists of p-channel JFET analog
switches designed to provide low on-resistance, good
off-isolation, and fast switching. These JFETs are optimized
for use in complementary switching applications with the
Vishay Siliconix 2N4856A series.
Gate-Drain Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . .
For applications information see AN104.
Document Number: 70260
S-04030—Rev. E, 04-Jun-01
P-Channel JFETs
r
Max (W)
I
Typ (pA)
DS(on)
D(off)
75
–10
100
–10
150
–10
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Eliminates Additional Buffering
The 2N5114 series is available with JAN, JANTX, or JANTXV
level processing, (see 2N5114 JAN series data sheet).
TO-206AA
(TO-18)
S
1
2
3
G
D
Case
Top View
30 V
Lead Temperature (
30 V
Power Dissipation
–50 mA
–65 to 200_C
Notes
–55 to 200_C
a.
Derate 3 mW/_C above 25_C
2N5114/5115/5116
Vishay Siliconix
t
Max (ns)
ON
16
30
42
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
1
/
” from case for 10 sec.)
. . . . . . . . . . . . . . . . . . .
16
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300_C
500 mW
www.vishay.com
9-1

2N5116-E3 Summary of contents

  • Page 1

    ... Part Number V (V) GS(off) 2N5114 2N5115 2N5116 Low On-Resistance: 2N5114 < Fast Switching— High Off-Isolation—I : –10 pA D(off) D Low Capacitance Low Insertion Loss The 2N5114 series consists of p-channel JFET analog switches designed to provide low on-resistance, good off-isolation, and fast switching. These JFETs are optimized for use in complementary switching applications with the Vishay Siliconix 2N4856A series ...

  • Page 2

    ... kHz – MHz MHz MHz kHz See Switching Circuit Limits 2N5114 2N5115 2N5116 Min Max Min Max Min Max –30 –90 –15 –60 –5 –25 500 500 500 –500 –500 –500 –1 –1 –1 –1.3 –0.8 –0.6 75 100 150 –1 –1 – ...

  • Page 3

    ... Forward Transconductance and Output Conductance –100 18 I DSS –80 15 –60 12 –40 9 – 300 240 180 120 60 0 –100 – – 2N5114/5115/5116 Vishay Siliconix vs. Gate-Source Cutoff Voltage g and – kHz – Gate-Source Cutoff Voltage (V) GS(off) On-Resistance vs. Temperature I = – changes X 0.7%/ 1.5 V GS(off –35 – ...

  • Page 4

    ... Vishay Siliconix Output Characteristics – 1.5 V 0.5 V –1.6 1.0 V –1.2 –0.8 –0 –0.1 –0.2 –0.3 V – Drain-Source Voltage (V) DS Output Characteristics – GS(off) –20 –15 –10 – –4 –8 –12 V – Drain-Source Voltage (V) DS Capacitance vs. Gate-Source Voltage MHz iss 12 C rss ...

  • Page 5

    ... Input Capacitance 1.5 pF PRF 1 MHz See Typical Characteristics curves for changes. Document Number: 70260 S-04030—Rev. E, 04-Jun-01 _ – – –32 –24 –16 –8 0.8 1.0 100 V = – 2N5116 – GS( 390 W V GS(L) – –5 V 2N5114/5115/5116 Vishay Siliconix Transfer Characteristics –15 V GS(off –55_C A ...