IRF7501PBF International Rectifier, IRF7501PBF Datasheet - Page 5

MOSFET, DUAL, NN, MICRO-8

IRF7501PBF

Manufacturer Part Number
IRF7501PBF
Description
MOSFET, DUAL, NN, MICRO-8
Manufacturer
International Rectifier
Datasheet

Specifications of IRF7501PBF

Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
2.4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
135mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs
RoHS Compliant
www.irf.com
500
400
300
200
100
1000
100
0.1
0
10
0.00001
1
Fig 8. Typical Capacitance Vs.
1
D = 0.50
Drain-to-Source Voltage
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
C
C
C
0.20
0.10
0.05
0.02
0.01
V
iss
oss
rss
DS
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
(THERMAL RESPONSE)
0.0001
= 0V,
= C
= C
= C
SINGLE PULSE
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
, C
0.001
ds
SHORTED
t , Rectangular Pulse Duration (sec)
1
100
0.01
A
10
8
6
4
2
0
0.1
0
I
V
D
DS
= 1.7A
= 16V
Fig 9. Typical Gate Charge Vs.
1. Duty factor D = t / t
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
2
G
Gate-to-Source Voltage
1
J
4
DM
x Z
1
IRF7501PbF
thJA
P
2
FOR TEST CIRCUIT
6
DM
SEE FIGURE 9
+ T
10
A
t
1
t
2
8
5
100
10
A

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