2N7002K-T1-E3 Vishay, 2N7002K-T1-E3 Datasheet

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2N7002K-T1-E3

Manufacturer Part Number
2N7002K-T1-E3
Description
N-CH ENHANCEMENT MOSFET W/ ESD PROTECT
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr

Specifications of 2N7002K-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
30pF @ 25V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.3 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Rohs Compliant
YES
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
7.5ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
200mW
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
2Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N7002K-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002K-T1-E3
Manufacturer:
SIX
Quantity:
177 000
Part Number:
2N7002K-T1-E3
Manufacturer:
RENESAS
Quantity:
69
Part Number:
2N7002K-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
2N7002K-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
2N7002K-T1-E3
Quantity:
70 000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71333
S09-0857-Rev. E, 18-May-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Ordering Information: 2N7002K-T1
V
DS
G
60
S
(V)
1
2
* Marking Code
2N7002K (7K)*
Top View
T O-236
SOT -23
b
a
2N7002K-T1-E3 (Lead (Pb)-free)
2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free)
2 at V
R
DS(on)
J
GS
= 150 °C)
3
b
= 10 V
(Ω)
D
N-Channel 60-V (D-S) MOSFET
b
I
D
A
300
(mA)
= 25 °C, unless otherwise noted
T
T
T
T
FEATURES
BENEFITS
APPLICATIONS
A
A
A
A
• Halogen-free According to IEC 61249-2-21
• Low On-Resistance: 2 Ω
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET
• 2000 V ESD Protection
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
• Battery Operated Systems
• Solid-State Relays
= 100 °C
= 100 °C
= 25 °C
= 25 °C
Definition
Compliant to RoHS Directive 2002/95/EC
Memories, Transistors, etc.
®
Symbol
T
Power MOSFET
R
V
V
J,
I
P
DM
I
thJA
DS
GS
D
T
D
stg
- 55 to 150
Limit
± 20
0.35
0.14
300
190
800
350
60
Vishay Siliconix
2N7002K
www.vishay.com
°C/W
Unit
mA
°C
W
V
1

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2N7002K-T1-E3 Summary of contents

Page 1

... O-236 SOT - Top View 2N7002K (7K)* * Marking Code Ordering Information: 2N7002K-T1 2N7002K-T1-E3 (Lead (Pb)-free) 2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° Pulsed Drain Current b Power Dissipation b Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes: a ...

Page 2

... Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage a Dynamic Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... 0.0 0.1 0.2 0 Total Gate Charge (nC) g Gate Charge Document Number: 71333 S09-0857-Rev. E, 18-May- 600 800 1000 0.4 0.5 0.6 2N7002K Vishay Siliconix 1200 °C J 900 125 °C 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics iss 16 C oss 8 C rss 0 ...

Page 4

... Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 100 T = 125 ° 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 I 0.0 - 0.2 - 0.4 - 0 Junction Temperature (°C) J Threshold Voltage Variance Over Temperature 2 1 Duty Cycle = 0.5 0.2 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71333. Document Number: 71333 S09-0857-Rev. E, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 2N7002K Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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