2N7002K-T1-E3 Vishay, 2N7002K-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: 2N7002K-T1-E3
• Description: N-CH ENHANCEMENT MOSFET W/ ESD PROTECT
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of 2N7002K-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 30pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Rohs Compliant: YES
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 7.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 200mW
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 2Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N7002K-T1-E3TR

2N7002K
Vishay Siliconix
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
a
a, b, c
a
a
a
A
= 25 °C, unless otherwise noted
Symbol
R
V
I
t
t
I
C
I
DS(on)
C
V
GS(th)
D(on)
V
C
d(on)
d(off)
GSS
DSS
Q
g
oss
DS
SD
rss
iss
fs
g
I
D
V
V
≅ 200 mA, V
DS
DS
= 0 V, V
= 60 V, V
V
V
V
V
V
V
V
V
V
V
V
I
V
GS
S
V
V
DS
DS
GS
DS
V
DS
DS
GS
GS
DS
DD
DS
DS
DS
= 200 mA, V
GS
Test Conditions
= 0 V, V
= 0 V, V
= 4.5 V, I
= 10 V, I
= 0 V, V
= 10 V, I
= 10 V, V
= V
= 10 V, V
= 4.5 V, V
= 30 V, R
= 0 V, V
= 60 V, V
I
= 25 V, V
= 0 V, I
D
GS
f = 1 MHz
GS
≅ 250 mA
GS
GEN
= ± 10 V, T
, I
= 0 V , T
GS
GS
GS
D
D
D
D
GS
D
= 10 V, R
GS
DS
L
DS
= 500 mA
= 250 µA
GS
= 200 mA
GS
= 10 µA
= 200 mA
= ± 20 V
= ± 15 V
GS
= ± 10 V
= 150 Ω
= ± 5 V
= 7.5 V
= 4.5 V
= 10 V
= 0 V
= 0 V
= 0 V
J
J
= 125 °C
= 85 °C
G
= 10 Ω
Min.
800
500
100
60
1
S09-0857-Rev. E, 18-May-09
Limits
Typ.
Document Number: 71333
0.4
2.5
30
6
a
± 1000
± 150
± 100
Max.
± 10
500
2.5
1.3
0.6
25
35
1
1
2
4
Unit
mA
mS
nC
µA
nA
µA
pF
ns
Ω
V
V