2N7002K-T1-E3 Vishay, 2N7002K-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: 2N7002K-T1-E3
• Description: N-CH ENHANCEMENT MOSFET W/ ESD PROTECT
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of 2N7002K-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 30pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Rohs Compliant: YES
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 7.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 200mW
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 2Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N7002K-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71333
S09-0857-Rev. E, 18-May-09
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
7
6
5
4
3
2
1
0
0.0
0
0
V
V
I
D
GS
DS
= 250 mA
0.1
On-Resistance vs. Drain Current
= 4.5 V
= 10 V
200
1
V
V
DS
Output Characteristics
Q
GS
I
g
- Drain-to-Source Voltage (V)
D
0.2
- Total Gate Charge (nC)
= 10 V
- Drain Current (mA)
400
Gate Charge
2
0.3
600
3
0.4
7 V
V
GS
6 V
800
= 10 V
4
0.5
5 V
4 V
3 V
1000
0.6
5
1200
900
600
300
2.0
1.6
1.2
0.8
0.4
0.0
40
32
24
16
0
8
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
1
5
V
V
DS
GS
T
Transfer Characteristics
C
0
J
C
rss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
oss
2
V
GS
2 5
Capacitance
10
= 10 V at 500 mA
T
C
J
V
5 0
iss
3
Vishay Siliconix
= - 55 °C
GS
= 0 V
15
7 5
4
2N7002K
V
at 200 mA
125 °C
www.vishay.com
100
GS
20
= 4.5 V
25 °C
5
125
150
25
6
3