IRF840APBF Vishay, IRF840APBF Datasheet
IRF840APBF
Specifications of IRF840APBF
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IRF840APBF Summary of contents
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... Compliant to RoHS Directive 2002/95/EC D APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Two Transistor Forward S • Half Bridge • Full Bridge TO-220AB IRF840APbF SiHF840A-E3 IRF840A SiHF840A = 25 °C, unless otherwise noted) C SYMBOL ° ...
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... IRF840A, SiHF840A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... C 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 150 °C 0 91065_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF840A, SiHF840A Vishay Siliconix ° 150 C J ° µs Pulse Width 4.0 5.0 6.0 7.0 8.0 9.0 ...
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... IRF840A, SiHF840A Vishay Siliconix MHz iss rss oss ds C iss oss rss Drain-to-Source Voltage ( 91065_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 400 250 100 Total Gate Charge (nC) 91065_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF840A, SiHF840A Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
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... IRF840A, SiHF840A Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 1200 Top 1000 Bottom 800 600 400 200 100 50 Starting T , Junction Temperature (°C) 91065_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current www ...
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... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91065. ...
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... F H(1) J(1) L L(1) Ø ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471 Note * 1.62 mm (dimension including protrusion) Heatsink hole for HVM C J(1) Package Information Vishay Siliconix MILLIMETERS INCHES MIN. MAX. MIN. MAX. 4.25 4.65 0.167 0.183 0.69 1.01 0.027 0.040 1.20 1.73 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...