IRF840APBF Vishay, IRF840APBF Datasheet - Page 2

• Manufacturer Part Number: IRF840APBF
• Description: N CHANNEL MOSFET, 500V, 8A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF840APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.85Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840APBF

IRF840A, SiHF840A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C
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2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
C
V
R
V
oss
R
t
t
R
R
C
C
C
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
GSS
DSS
g
Q
Q
DS
t
SM
I
t
thCS
thJC
t
t
thJA
DS
oss
oss
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
V
V
J
R
GS
GS
DS
GS
Intrinsic turn-on time is negligible (turn-on is dominated by L
GS
= 25 °C, I
g
T
V
Reference to 25 °C, I
J
= 9.1 , R
GS
= 400 V, V
= 10 V
= 10 V
= 0 V; V
= 0 V; V
= 25 °C, I
V
V
V
V
f = 1.0 MHz, see fig. 5
= 0 V; V
TYP.
V
0.50
TEST CONDITIONS
DS
DS
DS
GS
oss
DD
-
-
= 500 V, V
= V
= 50 V, I
= 0 V, I
F
while V
V
= 250 V, I
V
DS
DS
GS
V
= 8 A, dI/dt = 100 A/μs
DS
D
GS
GS
GS
S
DS
= 400 V, f = 1.0 MHz
= 1.0 V, f = 1.0 MHz
= ± 30 V
= 31, see fig. 10
= 8 A, V
, I
= 25 V,
I
D
= 0 V,
= 0 V, T
= 0 V to 400 V
D
D
see fig. 6 and 13
DS
= 8 A, V
D
= 250 μA
= 250 μA
= 4.8 A
GS
D
is rising from 0 % to 80 % V
I
D
= 8 A
D
= 0 V
GS
= 4.8 A
J
= 1 mA
= 125 °C
DS
G
= 0 V
b
= 400 V,
b
c
b
MAX.
b
D
S
1.0
62
b
-
b
MIN.
500
2.0
3.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0506-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
DS
Document Number: 91065
TYP.
1018
1490
0.58
2.16
.
155
422
8.0
42
56
11
23
26
19
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.85
3.24
250
633
4.0
9.0
8.0
2.0
S
25
38
18
32
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
μC
pF
ns
ns

V
V
S
A
V