IRF840APBF Vishay, IRF840APBF Datasheet - Page 6

• Manufacturer Part Number: IRF840APBF
• Description: N CHANNEL MOSFET, 500V, 8A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF840APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.85Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840APBF

IRF840A, SiHF840A
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91065_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1200
1000
Vary t
required I
800
600
400
200
0
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
25
p
V
I
AS
to obtain
DS
AS
Starting T
R
50
10 V
G
V
DS
J
, Junction Temperature (°C)
t
75
p
t
p
I
AS
D.U.T
100
0.01 Ω
L
V
Top
Bottom
DS
125
This datasheet is subject to change without notice.
V
3.6 A
5.1 A
8.0 A
DD
I
D
150
+
-
V
DD
91065_12d
600
580
560
540
520
10 V
Fig. 12d - Basic Gate Charge Waveform
Fig. 13a - Typical Drain-to-Source Voltage vs.
12 V
V
0.0
Fig. 13b - Gate Charge Test Circuit
V
G
GS
Same type as D.U.T.
Current regulator
1.0
Q
0.2 µF
GS
2.0
I
AV
Current sampling resistors
3 mA
50 kΩ
Avalanche Current
, Avalanche Current (A)
Charge
Q
3.0
0.3 µF
Q
GD
G
I
G
4.0
S11-0506-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91065
D.U.T.
5.0
I
D
6.0
+
-
V
DS
7.0
8.0