IRFB20N50KPBF Vishay, IRFB20N50KPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB20N50KPBF
• Description: N CH MOSFET, 500V, 20A, TO-220AB
• Manufacturer: Vishay

Specifications of IRFB20N50KPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2870pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 280000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB20N50KPBF

Diode Characteristics
Document Number: 91101
Dynamic @ T

‚
Static @ T
Notes:
Symbol
I
I
V
t
Q
t
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
Symbol
V
∆V
R
V
DSS
GSS
S
on
d(on)
r
d(off)
f
SM
rr
Symbol
fs
SD
oss
oss
oss
oss
GS(th)
gs
gd
iss
rss
(BR)DSS
DS(on)
g
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature.
Starting T
I
AS
eff.
= 20A,
/∆T
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
= 25°C, L = 1.6mH, R
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
G
= 25Ω,
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
500
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
11
–––
–––
–––
–––
–––
„
ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by L
Pulse width ≤ 400µs; duty cycle ≤ 2%.
I
T
SD
2870 –––
3480 –––
J
0.61 –––
0.21 0.25
–––
–––
–––
–––
320
160
–––
–––
–––
520
–––
–––
–––
–––
–––
––– -100
5.3
22
74
45
33
34
85
≤ 150°C
≤ 20A, di/dt ≤ 350A/µs, V
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
780
8.0
–––
250
100
1.5
5.0
33
54
50
20
80
V/°C
µC
nC
ns
pF
ns
µA
µA
nA
V
S
Ω
V
V
ƒ = 1.0MHz, See Fig. 5
V
I
V
V
V
I
R
V
V
V
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
Reference to 25°C, I
V
V
V
V
V
V
D
D
J
J
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
GS
GS
DS
DS
DS
GS
GS
= 20A
= 20A
= 25°C, I
= 25°C, I
= 7.5Ω
= 50V, I
= 400V
= 25V
= 10V, See Fig. 6 and 13 „
= 250V
= 10V,See Fig. 10 „
= 0V
= 0V, V
= 0V, V
= 0V, V
= V
= 500V, V
= 30V
= 0V, I
= 10V, I
= 400V, V
= -30V
DD
GS
≤ V
, I
D
S
F
DS
D
(BR)DSS
D
D
DS
DS
= 250µA
Conditions
= 20A, V
= 20A
Conditions
= 12A
Conditions
= 250µA
= 12A
GS
GS
= 0V to 400V …
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
= 0V
= 0V, T
,
D
GS
www.vishay.com
„
= 1mA
J
= 0V „
G
= 125°C
S
+L
D
D
S
)
2