IXTH30N50L2 IXYS SEMICONDUCTOR, IXTH30N50L2 Datasheet
IXTH30N50L2
Specifications of IXTH30N50L2
Related parts for IXTH30N50L2
IXTH30N50L2 Summary of contents
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... ±30V GSS DSS DS DSS 0.5 • 10V, I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 G O Maximum Ratings 500 = 1MΩ 500 GS ±20 ± 1.5 400 -55 to +150 +150 -55 to +150 300 260 1.13/10 6.0 5.5 5.0 Characteristic Values Min ...
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... C Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ 100V 500 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 TO-247 (IXTH) Outline Max Ω Terminals Gate Source ns Dim. Millimeter Min. Max 4 ...
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... Value 125º 25º IXTH30N50L2 IXTQ30N50L2 Fig. 2. Extended Output Characteristics @ T = 25º 20V GS 14V 70 12V 60 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 30A ...
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... IXYS reserves the right to change limits, test conditions, and dimensions 125ºC J 25ºC - 40ºC 7.0 7.5 8.0 8.5 9.0 9 25ºC J 0.8 0.9 1.0 1.1 1.00 C iss C oss 0.10 C rss 0. IXTH30N50L2 IXTQ30N50L2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 250V DS 14 ...
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... IXYS CORPORATION, All rights reserved Fig. 14. Forward-Bias Safe Operating Area 100.0 R DS(on) 25µs 100µs 10.0 1ms 10ms 1.0 100ms 150ºC J Single Pulse 0.1 1000 10 IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 @ T = 75ºC C Limit DC 100 V - Volts DS IXYS REF: T_30N50L2(7R)4-23-08-A 25µs 100µs 1ms 10ms 100ms 1000 ...