ZXMN10A25KTC Diodes Inc, ZXMN10A25KTC Datasheet - Page 4

• Manufacturer Part Number: ZXMN10A25KTC
• Description: MOSFET, N CH, 100V, 6.4A, DPAK
• Manufacturer: Diodes Inc

Specifications of ZXMN10A25KTC

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.4A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 125mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 9.85W
• No. Of Pins: 3
• Configuration: Single
• Resistance Drain-source Rds (on): 0.125 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.4 A
• Power Dissipation: 2.11 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 2 - August 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain current I
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*)(‡)
Symbol
V
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
amb
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
300 s; duty cycle
Min.
100
2.0
4
17.16
Typ.
57.3
17.7
3.77
5.36
0.85
40.5
859
7.3
4.9
3.7
9.4
9.6
33
62
2%.
0.125
0.150
Max.
0.95
100
0.5
4.0
Unit Conditions
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ZXMN10A25K
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= 250 A, V
= 250 A, V
= 2.9A
= 2.9A
=25°C, I
=25°C, I
≅6.0 , V
= 100V, V
= 15V, I
= 50V, V
= 50V, V
= 50V, V
=±20V, V
= 10V, I
= 6V, I
= 50V, I
=0V
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S
S
D
= 4A,
= 2.9A,
D
GS
D
D
= 2.6A
GS
GS
GS
= 2.9A
= 2.9A
= 1A
DS
GS
DS
GS
= 10V
=0V
= 5V
= 10V
=0V
=V
=0V
=0V
GS