ZXMN10A25KTC Diodes Inc, ZXMN10A25KTC Datasheet - Page 6

• Manufacturer Part Number: ZXMN10A25KTC
• Description: MOSFET, N CH, 100V, 6.4A, DPAK
• Manufacturer: Diodes Inc

Specifications of ZXMN10A25KTC

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.4A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 125mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 9.85W
• No. Of Pins: 3
• Configuration: Single
• Resistance Drain-source Rds (on): 0.125 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.4 A
• Power Dissipation: 2.11 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical characteristics
Issue 2 - August 2006
© Zetex Semiconductors plc 2006
90%
10%
V
V
DS
GS
V
G
Q
GS
t
Basic gate charge waveform
d(on)
Switching time waveforms
t
(on)
t
r
Q
Q
G
GD
Charge
t
d(off)
t
(on)
t
r
6
Switching time test circuit
Gate charge test circuit
12V
R
G
ZXMN10A25K
V
regulator
Current
GS
50k
I
G
V
GS
www.zetex.com
R
Same as
D.U.T
D
D.U.T
V
DS
I
V
D
DS
V
CC