2SK3562 Toshiba, 2SK3562 Datasheet - Page 5

• Manufacturer Part Number: 2SK3562
• Description: MOSFET, N, 600V, TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3562

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.25ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Transistor Case: RoHS Compliant
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes

0.01
100
0.1
10
1
1
DRAIN-SOURCE VOLTAGE V
I D max (CONTINUOUS) *
DC OPERATION
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
I D max (PULSED) *
※ SINGLE NONREPETITIVE
Tc = 25°C
SAFE OPERATING AREA
0.001
PULSE
0.01
Tc=25℃
0.1
10
10
10μ
1
0.02
0.05
0.1
Duty=0.5
0.2
0.01
1 ms *
100
100μ
V DSS max
DS
100 µs *
SINGLE PULSE
(V)
1000
1ｍ
PULSE WIDTH t
r
5
th
10ｍ
– t
w
R
V
DD
G
w
= 25 Ω
= 90 V, L = 16.8mH
500
400
300
200
100
(s)
− 15 V
0
100ｍ
15 V
25
TEST CIRCUIT
CHANNEL TEMPERATURE (INITIAL)
P DM
50
Duty = t/T
R th (ch-c) = 3.125°C/W
1
t
T
75
E
T
AS
ch
Ε AS
– T
V
(°C)
DD
=
ch
100
WAVE FORM
B
10
1
2
VDSS
I
⋅
AR
L
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
2004-07-01
B VDSS
2SK3562
V
DS
B VDSS
150
−
V DD
⎞
⎟
⎟
⎠