NTE464 NTE ELECTRONICS, NTE464 Datasheet
NTE464
Manufacturer Part Number
NTE464
Description
TRANSISTOR,MOSFET,P-CHANNEL,30MA I(D),TO-72
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE464.pdf
(2 pages)
Specifications of NTE464
Rohs Compliant
YES
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage, V
Gate–Source Voltage, V
Gate Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
OFF Characteristics
Drain–Source Breakdown Voltage
Zero–Gate–Voltage Drain Current
Gate Reverse Current
ON Characteristics
Gate Threshold Voltage
Drain–Source On–Voltage
On–State Drain Current
Derate Above 25 C
Derate Above 25 C
Parameter
G
Enhancement Mode for Switching Applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary MOSFET Transistors
DG
GS
DS
NTE464 (P–Ch) & NTE465 (N–Ch)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
stg
A
V
Symbol
V
V
= +25 C unless otherwise specified)
(BR)DSX
I
I
GS(Th)
I
DS(on)
D(on)
DSS
GSS
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
I
V
V
V
V
I
V
D
D
DS
DS
GS
DS
GS
= –10 A, V
= –2mA, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= –10V, V
= –10V, V
= –10V, I
= 30V, V
= –10V, V
Test Conditions
GS
D
GS
GS
GS
DS
DS
= –10 A
= –10V
= 0
= 0, T
= 0
= 0, T
= –10V
A
A
= +150 C
= +25 C
Min
–25
–1
–3
–
–
–
–
Typ
–
–
–
–
–
–
–
–55 to +175 C
Max
–10
–10
–5
–1
4.56mW/ C
–
10
–
1.7mW/ C
300mW
800mW
+175 C
30mA
Unit
mA
nA
pA
V
V
V
25V
30V
30V
A
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NTE464 Summary of contents
Page 1
... NTE464 (P–Ch) & NTE465 (N–Ch) Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications Absolute Maximum Ratings: Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Gate Current Total Device Dissipation (T A Derate Above Total Device Dissipation (T C Derate Above Operating Junction Temperature, T ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter Small–Signal Characteristics Drain–Source Resistance NTE464 NTE465 Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Drain–Substrate Capacitance NTE464 NTE465 Switching Characteristics Turn–On Delay Rise Time Turn–Off Delay Fall Time = +25 C unless otherwise specified) A Symbol ...