PSMN7R0-40LS NXP Semiconductors, PSMN7R0-40LS Datasheet - Page 4

• Manufacturer Part Number: PSMN7R0-40LS
• Description: MOSFET,N CH,40V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-40LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
PSMN7R0-40LS
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
R
temperature. In practice R
(A)
I
th(j-a)
10
10
D
10
10
10
10
10
−1
−2
−1
1
3
2
1
10
10
values
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient
−1
−6
mb
Thermal characteristics
single shot
0.1
0.05
δ = 0.5
0.02
0.2
= 25°C; t
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
p
= 300 μs
10
th(j-a)
−5
will be determined by the customer’s PCB characteristics
Limit R
DSon
All information provided in this document is subject to legal disclaimers.
10
1
−4
= V
DS
Rev. 2 — 18 August 2010
/ I
D
N-channel QFN3333 40 V 7.0 mΩ standard level MOSFET
10
−3
Conditions
see
DC
Figure 4
10
10
−2
[1]
PSMN7R0-40LS
Min
-
-
10
P
V
−1
DS
(V)
t
Typ
1
53
p
t
100 μs
1 ms
10 ms
100 ms
p
T
=10 μs
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aae516
003aae141
δ =
Max
1.3
60
t
T
p
t
10
1
2
Unit
K/W
K/W
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