SUB75N08-10-E3 Vishay, SUB75N08-10-E3 Datasheet
SUB75N08-10-E3
Specifications of SUB75N08-10-E3
Related parts for SUB75N08-10-E3
SUB75N08-10-E3 Summary of contents
Page 1
... N-Channel MOSFET Symbol 125 0 (TO-220AB and TO-263 (TO-263 stg Symbol d PCB Mount (TO-263 thJA hJA Free Air (TO-220AB) R thJC SUP/SUB75N08-10 Vishay Siliconix Limit Unit 240 60 280 mJ c 187 W W 3.7 –55 to 175 C Limit Unit 40 62.5 C/W C/W 0.8 www.vishay.com FaxBack 408-970-5600 2-1 ...
Page 2
... SUP/SUB75N08-10 Vishay Siliconix Specifications ( Unless Otherwise Noted) J Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage Z Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
Page 3
... S-57253—Rev. B, 24-Feb-98 200 7 V 150 100 0.012 0.010 25 C 0.008 125 C 0.006 0.004 0.002 0 80 100 iss SUP/SUB75N08-10 Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 100 I – Drain Current (A) D Gate Charge = 100 125 150 ...
Page 4
... SUP/SUB75N08-10 Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Maximum Avalanche and Drain Current vs. Case Temperature 100 100 T – Case Temperature ( C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 ...
Page 5
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...