SUB75N08-09L-E3 Vishay/Siliconix, SUB75N08-09L-E3 Datasheet
SUB75N08-09L-E3
Specifications of SUB75N08-09L-E3
Related parts for SUB75N08-09L-E3
SUB75N08-09L-E3 Summary of contents
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... 0 (TO-263 stg Symbol d PCB Mount (TO-263 thJA thJA Free Air (TO-220AB) R thJC SUP/SUB75N08-09L Vishay Siliconix N-Channel MOSFET Limit Unit 240 75 280 mJ c 250 W W 3.7 –55 to 175 ...
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... SUP/SUB75N08-09L Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... C C 0.010 25 C 0.008 125 C 0.006 0.004 0.002 0 80 100 rss SUP/SUB75N08-09L Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUP/SUB75N08-09L Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Avalanche Current vs. Time 300 100 150 0.0001 0.001 0.01 t (Sec) in www.vishay.com FaxBack 408-970-5600 2-4 New Product 100 ...
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... S-60951—Rev. A, 26-Apr-99 New Product 300 Limited by r DS(on) 100 10 1 150 175 0 –3 – Square Wave Pulse Duration (sec) SUP/SUB75N08-09L Vishay Siliconix Safe Operating Area 10 s 100 100 ms Single Pulse 100 – Drain-to-Source Voltage (V) – www ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...