... 0 (TO-263 stg Symbol d PCB Mount (TO-263 thJA thJA Free Air (TO-220AB) R thJC SUP/SUB75N08-09L Vishay Siliconix N-Channel MOSFET Limit Unit 240 75 280 mJ c 250 W W 3.7 –55 to 175 ...
... SUP/SUB75N08-09L Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
... C C 0.010 25 C 0.008 125 C 0.006 0.004 0.002 0 80 100 rss SUP/SUB75N08-09L Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
... SUP/SUB75N08-09L Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Avalanche Current vs. Time 300 100 150 0.0001 0.001 0.01 t (Sec) in www.vishay.com FaxBack 408-970-5600 2-4 New Product 100 ...
... S-60951—Rev. A, 26-Apr-99 New Product 300 Limited by r DS(on) 100 10 1 150 175 0 –3 – Square Wave Pulse Duration (sec) SUP/SUB75N08-09L Vishay Siliconix Safe Operating Area 10 s 100 100 ms Single Pulse 100 – Drain-to-Source Voltage (V) – www ...
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