SUB75N08-09L-E3 Vishay/Siliconix, SUB75N08-09L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUB75N08-09L-E3
• Description: MOSFET 75V 75A 250W
• Manufacturer: Vishay/Siliconix

Specifications of SUB75N08-09L-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.7 W
• Rise Time: 10 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 107 ns

www.vishay.com FaxBack 408-970-5600
2-4
SUP/SUB75N08-09L
Vishay Siliconix
2.5
2.0
1.5
1.0
0.5
300
100
10
0.0001
0
–50
1
On-Resistance vs. Junction Temperature
V
I
–25
D
GS
= 75 A
I
= 10 V
AV
0.001
T
Avalanche Current vs. Time
0
(A) @ T
J
– Junction Temperature ( C)
25
I
J
AV
= 150 C
(A) @ T
50
t
in
0.01
(Sec)
75
J
= 25 C
100
0.1
125
150
175
1
New Product
100
0.1
100
10
90
80
70
60
1
0.2
–50
–25
Source-Drain Diode Forward Voltage
T
Drain-Source Breakdown Voltage vs.
J
= 150 C
0.4
V
SD
T
0
J
– Junction Temperature ( C)
– Source-to-Drain Voltage (V)
Junction Temperature
25
0.6
50
75
S-60951—Rev. A, 26-Apr-99
0.8
Document Number: 70870
100
T
J
= 25 C
125
1.0
150
175
1.2