SUB75N08-09L-E3 Vishay/Siliconix, SUB75N08-09L-E3 Datasheet - Page 5

• Manufacturer Part Number: SUB75N08-09L-E3
• Description: MOSFET 75V 75A 250W
• Manufacturer: Vishay/Siliconix

Specifications of SUB75N08-09L-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.7 W
• Rise Time: 10 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 107 ns

Document Number: 70870
S-60951—Rev. A, 26-Apr-99
0.01
0.1
2
1
90
75
60
45
30
15
10
0
0
0.2
0.1
0.05
0.02
–5
Duty Cycle = 0.5
25
Maximum Drain Current vs.
T
C
Single Pulse
50
– Ambient Temperature ( C)
Case Temperature
10
75
–4
100
Normalized Thermal Transient Impedance, Junction-to-Case
125
10
150
–3
Square Wave Pulse Duration (sec)
175
New Product
10
–2
300
100
10
1
0.1
by r
Limited
DS(on)
V
DS
10
Single Pulse
–1
T
– Drain-to-Source Voltage (V)
Safe Operating Area
SUP/SUB75N08-09L
C
1
= 25 C
www.vishay.com FaxBack 408-970-5600
Vishay Siliconix
10
1
3
100
10 s
100 s
1 s
10 ms
100 ms
dc
2-5