SUB75N08-09L-E3 Vishay/Siliconix, SUB75N08-09L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUB75N08-09L-E3
• Description: MOSFET 75V 75A 250W
• Manufacturer: Vishay/Siliconix

Specifications of SUB75N08-09L-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.7 W
• Rise Time: 10 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 107 ns

Document Number: 70870
S-60951—Rev. A, 26-Apr-99
9000
7500
6000
4500
3000
1500
250
200
150
100
200
160
120
50
80
40
0
0
0
0
0
0
C
20
15
V
V
2
V
oss
DS
DS
GS
Output Characteristics
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
Transconductance
V
GS
Capacitance
40
30
4
= 10, 9, 8, 7, 6, 5 V
C
iss
60
45
6
T
C
C
rss
80
60
= –55 C
4 V
3 V
8
125 C
25 C
100
10
75
New Product
0.012
0.010
0.008
0.006
0.004
0.002
200
160
120
80
40
10
0
0
8
6
4
2
0
0
0
0
V
I
D
GS
= 75 A
V
On-Resistance vs. Drain Current
20
20
SUP/SUB75N08-09L
= 30 V
GS
V
1
GS
= 4.5 V
Q
Transfer Characteristics
g
– Gate-to-Source Voltage (V)
www.vishay.com FaxBack 408-970-5600
I
D
– Total Gate Charge (nC)
40
40
25 C
T
– Drain Current (A)
Gate Charge
C
2
Vishay Siliconix
= 125 C
60
60
3
80
80
–55 C
V
GS
= 10 V
4
100
100
120
120
2-3
5