SUB75N08-09L Vishay, SUB75N08-09L Datasheet
SUB75N08-09L
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SUB75N08-09L Summary of contents
Page 1
... 0 25_C (TO-263 stg Symbol d PCB Mount (TO-263 thJA thJA Free Air (TO-220AB) R thJC SUP/SUB75N08-09L Vishay Siliconix N-Channel MOSFET Limit Unit 75 V "20 a "75 " "240 "75 280 mJ c 250 W W 3.7 –55 to 175 ...
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... SUP/SUB75N08-09L Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Z Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance Forward Transconductance ...
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... T = –55_C C 0.010 25_C 0.008 125_C 0.006 0.004 0.002 0 80 100 rss SUP/SUB75N08-09L Vishay Siliconix Transfer Characteristics T = 125_C C 25_C –55_C – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUP/SUB75N08-09L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature (_C) J Avalanche Current vs. Time 300 100 I ( 25_C ( 150_C 0.0001 0.001 0.01 t (Sec) in www.vishay.com S FaxBack 408-970-5600 ...
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... S-60951—Rev. A, 26-Apr-99 New Product 300 Limited by r DS(on) 100 10 1 150 175 0 –3 – Square Wave Pulse Duration (sec) SUP/SUB75N08-09L Vishay Siliconix Safe Operating Area 10 ms 100 25_C C 100 ms Single Pulse 100 – Drain-to-Source Voltage (V) – www ...