IRF610STRLPBF Vishay, IRF610STRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRF610STRLPBF
• Description: N CH MOSFET, 200V, 3.3A, SMD-220
• Manufacturer: Vishay

Specifications of IRF610STRLPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.3A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF610S, SiHF610S
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB Mount)
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
c
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
R
t
t
I
I
C
V
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
g
L
L
t
DS
I
SM
t
thJA
thJA
thJC
t
t
on
DS
oss
SD
iss
rss
S
rr
fs
gs
gd
r
f
D
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
GS
GS
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
DS
Reference to 25 °C, I
J
MIN.
= 10 V
= 10 V
= 25 °C, I
= 160V, V
-
-
-
V
V
V
V
V
f = 1.0 MHz, see fig. 5
R
T
TEST CONDITIONS
DD
DS
DS
GS
DS
J
G
dI/dt = 100 A/µs
= 25 °C, I
= 100 V, I
= 200 V, V
= 24 Ω, R
= V
= 50 V, I
= 0 V, I
V
V
see fig. 10
V
GS
S
DS
GS
GS
I
GS
D
= 3.3 A, V
= ± 20 V
= 25 V,
, I
= 3.3 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
F
= 250 µA
D
D
= 250 µA
I
= 3.3 A,
= 2.0 A
GS
D
= 30 Ω,
= 3.3 A,
b
TYP.
= 2.0 A
D
= 0 V
-
-
-
= 1 mA
GS
b
J
G
G
DS
= 125 °C
= 0 V
b
= 160 V
b
D
S
S
D
b
b
MIN.
0.80
200
MAX.
2.0
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
62
S09-0071-Rev. A, 02-Feb-09
Document Number: 91024
TYP.
0.30
0.60
140
150
8.2
8.9
4.5
7.5
53
15
17
14
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
250
310
S
4.0
1.5
8.2
1.8
4.5
3.3
2.0
1.4
25
10
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nC
nH
µC
nA
µA
pF
ns
ns
Ω
V
V
S
A
V