IRF610STRLPBF Vishay, IRF610STRLPBF Datasheet - Page 3

• Manufacturer Part Number: IRF610STRLPBF
• Description: N CH MOSFET, 200V, 3.3A, SMD-220
• Manufacturer: Vishay

Specifications of IRF610STRLPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.3A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91024
S09-0071-Rev. A, 02-Feb-09
91024_01
91024_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
-1
0
-1
1
0
10
10
-1
Top
Bottom
-1
Top
Bottom
V
V
DS
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS ,
V
15 V
10 V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
, Drain-to-Source Voltage (V)
V
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
C
C
= 150 °C
= 25 °C
4.5 V
4.5 V
91024_03
91024_04
10
10
10
Fig. 4 - Normalized On-Resistance vs. Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
0
- 60 - 40 - 20 0
4
I
V
D
Fig. 3 - Typical Transfer Characteristics
GS
= 3.3 A
= 10 V
V
5
T
GS ,
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
IRF610S, SiHF610S
6
20 40 60 80 100 120 140 160
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3