IRF610STRLPBF Vishay, IRF610STRLPBF Datasheet - Page 6

• Manufacturer Part Number: IRF610STRLPBF
• Description: N CH MOSFET, 200V, 3.3A, SMD-220
• Manufacturer: Vishay

Specifications of IRF610STRLPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.3A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF610S, SiHF610S
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91024_12c
120
100
140
80
60
40
20
0
25
V
DD
Starting T
= 50 V
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
1.5 A
2.1 A
3.3 A
Current regulator
I
D
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S09-0071-Rev. A, 02-Feb-09
Document Number: 91024
D.U.T.
I
D
+
-
V
DS