IRF840LCSTRRPBF Vishay, IRF840LCSTRRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF840LCSTRRPBF
• Description: N CHANNEL MOSFET, 500V, 8A, D2-PAK
• Manufacturer: Vishay

Specifications of IRF840LCSTRRPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses SiHF840LC data and test conditions.
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
SM
t
I
t
t
on
DS
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
/T
J
T
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
J
R
GS
GS
= 25 °C, I
V
g
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
= 9.1 , R
J
= 10 V
= 10 V
= 400 V, V
= 25 °C, I
V
V
f = 1.0 MHz, see fig. 5
V
V
V
TYP.
TEST CONDITIONS
DD
DS
DS
DS
GS
-
-
F
= 250 V, I
= 500 V, V
= V
= 50 V, I
= 0 V, I
= 8.0 A, dI/dt = 100 A/μs
V
V
V
GS
D
DS
S
GS
GS
I
GS
D
= 30 , see fig. 10
= 8.0 A, V
= ± 20 V
see fig. 6 and 13
= 25 V,
, I
= 8.0 A, V
= 0 V,
= 0 V, T
D
D
D
= 250 μA
D
= 250 μA
I
GS
= 4.8 A
D
= 8.0 A,
= 4.8 A
D
= 0 V
= 1 mA
GS
J
DS
= 125 °C
G
b
= 0 V
c
= 400 V,
b
c
b, c
b, c
MAX.
b
D
S
1.0
40
b, c
MIN.
500
2.0
4.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-1477-Rev. B, 05-Jul-10
Document Number: 91068
TYP.
1100
0.63
170
490
3.0
18
12
25
27
19
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.85
250
740
4.0
8.0
2.0
4.5
S
25
39
10
19
28
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
μC
nA
μA
pF
ns
ns

S
A
V
V
V