SI7404DN-T1-E3 Vishay, SI7404DN-T1-E3 Datasheet

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... Bottom View Ordering Information: Si7404DN-T1-E3 (Lead (Pb)-free) Si7404DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Single Avalanche Current Single Avalanche Energy (Duty Cycle 1 %) Continuous Source Current (Diode Conduction) ...

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... Si7404DN Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time ...

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... Source-Drain Diode Forward Voltage Document Number: 71658 S-83043-Rev. F, 22-Dec- °C, unless otherwise noted A 3000 2500 2000 1500 1000 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 Si7404DN Vishay Siliconix C iss 500 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 0 ...

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... Si7404DN Vishay Siliconix TYPICAL CHARACTERISTICS T 0. 0.15 0.00 - 0.15 - 0.30 - 0. Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 ...

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