SI7404DN-T1-GE3 Vishay, SI7404DN-T1-GE3 Datasheet
SI7404DN-T1-GE3
Specifications of SI7404DN-T1-GE3
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SI7404DN-T1-GE3 Summary of contents
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... Bottom View Ordering Information: Si7404DN-T1-E3 (Lead (Pb)-free) Si7404DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Single Avalanche Current Single Avalanche Energy (Duty Cycle 1 %) Continuous Source Current (Diode Conduction) ...
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... Si7404DN Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time ...
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... Source-Drain Diode Forward Voltage Document Number: 71658 S-83043-Rev. F, 22-Dec- °C, unless otherwise noted A 3000 2500 2000 1500 1000 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 Si7404DN Vishay Siliconix C iss 500 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 0 ...
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... Si7404DN Vishay Siliconix TYPICAL CHARACTERISTICS T 0. 0.15 0.00 - 0.15 - 0.30 - 0. Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...