SIF902EDZ-T1-GE3 Vishay, SIF902EDZ-T1-GE3 Datasheet

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SIF902EDZ-T1-GE3

Manufacturer Part Number
SIF902EDZ-T1-GE3
Description
N CHANNEL MOSFET, 20V, POWERPAK
Manufacturer
Vishay
Datasheet

Specifications of SIF902EDZ-T1-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
10.3A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72987
S-80643-Rev. B, 24-Mar-08
S
PRODUCT SUMMARY
2
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (V
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Ordering Information: SiF902EDZ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
V
2
DS
G
20
6
2
(V)
5
PowerPAK
4
0.022 at V
0.023 at V
0.026 at V
0.028 at V
®
R
DS(on)
2 x 5
Bi-Directional N-Channel 20-V (D-S) MOSFET
GS
GS
GS
GS
GS
(Ω)
= 8 V)
= 4.5 V
= 4.0 V
= 3.1 V
= 2.5 V
J
a
= 150 °C)
a
Marking Code
XYZ: Lot Traceability and Date Code
MA: Part # Code
MAXYZ
a
1
I
D
10.3
10.0
2
9.4
9.0
(A)
S
3
1
a
S
1
G
2 mm
1
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
9.1
T
T
T
T
(Typ.)
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• ESD Protected: 4000 V
• Battery Protection Circuitry
G
Symbol
Symbol
1
T
R
R
J
- Cell Li-lon LiB/LiP Battery Packs
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
1.8 kΩ
®
Power MOSFET: 2.5 V Rated
Typical
10 s
10.3
7.4
3.1
3.5
1.8
4.8
30
61
- 55 to 150
D
S
1
1
± 12
20
40
Steady State
Maximum
G
2
0.86
7.0
5.1
1.5
1.6
6.0
36
76
Vishay Siliconix
SiF902EDZ
1.8 kΩ
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
D
S
2
2
1

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SIF902EDZ-T1-GE3 Summary of contents

Page 1

... Marking Code MAXYZ MA: Part # Code XYZ: Lot Traceability and Date Code Ordering Information: SiF902EDZ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current ( Continuous Diode Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... SiF902EDZ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature Document Number: 72987 S-80643-Rev. B, 24-Mar 0.01 75 100 125 150 SiF902EDZ Vishay Siliconix ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 7 Total Gate Charge (nC) ...

Page 4

... SiF902EDZ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 0.08 0.06 I 0.04 0.02 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ° 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72987. Document Number: 72987 S-80643-Rev. B, 24-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiF902EDZ Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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