SIF902EDZ-T1-GE3 Vishay, SIF902EDZ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIF902EDZ-T1-GE3
• Description: N CHANNEL MOSFET, 20V, POWERPAK
• Manufacturer: Vishay

Specifications of SIF902EDZ-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10.3A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiF902EDZ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
0.001
0
0.01
0
0.1
2
1
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
10
0.01
-4
1
0.05
0.02
0.1
Duty Cycle = 0.5
0.2
V
GS
2
0.1
- Gate-to-Source Voltage (V)
3
Single Pulse
T
10
A
Time (s)
= 25 °C
-3
1
4
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 7.0 A
5
10
6
10
100
-2
7
1000
8
Square Wave Pulse Duration (s)
10
-1
Limited by
- 0.2
- 0.4
- 0.6
0.01
0.4
0.2
100
0.0
0.1
1
10
1
- 50
0.1
* V
R
- 25
GS
DS(on)
Single Pulse
T
> minimum V
A
= 25 °C
V
*
DS
0
Safe Operating Area
- Drain-to-Source Voltage (V)
10
T
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
I
Threshold Voltage
D
P
J
1
DM
= 250 µA
- Temperature (°C)
25
JM
GS
-
T
at which R
t
A
BV
1
50
= P
S-80643-Rev. B, 24-Mar-08
t
DSS
2
Document Number: 72987
DM
I
DM
Z
Limited
75
thJA
thJA
100
Limited
t
t
DS(on)
1
2
10
(t)
= 61 °C/W
100
is specified
125
10
100
1 ms
10 ms
100 ms
1 s
10 s
100 s
DC
600
µs
µs
150
100