SIF902EDZ-T1-GE3 Vishay, SIF902EDZ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIF902EDZ-T1-GE3
• Description: N CHANNEL MOSFET, 20V, POWERPAK
• Manufacturer: Vishay

Specifications of SIF902EDZ-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10.3A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72987
S-80643-Rev. B, 24-Mar-08
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
I
V
D
On-Resistance vs. Drain Current
GS
GS
10
= 7.0 A
1
= 4.5 V
= 2.5 V
V
T
DS
Output Characteristics
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
I
20
D
V
25
- Drain Current (A)
GS
2
= 5 thru 3.5 V
50
30
V
3
GS
75
40
= 4.5 V
100
4
50
2.5 V
1.5 V
125
3 V
2 V
150
60
5
0.01
0.1
30
10
60
50
40
30
20
10
1
0
5
4
3
2
1
0
0.0
0
0
0.5
Source-Drain Diode Forward Voltage
V
I
D
DS
= 7.0 A
0.2
V
= 10 V
V
2
SD
GS
Transfer Characteristics
T
1.0
J
- Source-to-Drain Voltage (V)
Q
= 150 °C
- Gate-to-Source Voltage (V)
g
0.4
- Total Gate Charge (nC)
1.5
Gate Charge
4
2.0
T
0.6
Vishay Siliconix
C
25 °C
= - 55 °C
SiF902EDZ
6
2.5
0.8
www.vishay.com
3.0
T
J
125 °C
= 25 °C
8
1.0
3.5
1.2
4.0
10
3